參數(shù)資料
型號: TS83102G0BMGS
廠商: E2V TECHNOLOGIES PLC
元件分類: ADC
英文描述: 1-CH 10-BIT PROPRIETARY METHOD ADC, PARALLEL ACCESS, CBGA152
封裝: 21 X 21 MM, 1.27 MM PITCH, HERMETIC SEALED, CERAMIC, CGA-152
文件頁數(shù): 4/54頁
文件大?。?/td> 2622K
代理商: TS83102G0BMGS
12
0935B–BDC–06/08
TS83102G0BMGS
e2v semiconductors SAS 2008
Table 3-8.
Digital Coding
Differential
Analog Input
Voltage Level
Digital Output
Binary (B/GB = GND or floating)
MSB………....LSB Out-of-Range
GRAY (B/GB = VEE)
MSB………....LSB Out-of-Range
> 250.25 mV
>Top end of full-scale + LSB
1 1 1 1 1 1 1 1 1 1
1
1 0 0 0 0 0 0 0 0 0
1
250.25 mV
249.75 mV
Top end of full-scale + LSB
Top end of full-scale - LSB
1 1 1 1 1 1 1 1 1 1
0
1 1 1 1 1 1 1 1 1 0
0
1 0 0 0 0 0 0 0 0 0
0
1 0 0 0 0 0 0 0 0 1
0
125.25 mV
124.75 mV
3/4 full-scale + LSB
3/4 full-scale - LSB
1 1 0 0 0 0 0 0 0 0
0
1 0 1 1 1 1 1 1 1 1
0
1 0 1 0 0 0 0 0 0 0
0
1 1 1 0 0 0 0 0 0 0
0
0.25 mV
-0.25 mV
Mid-scale + LSB
Mid-scale - LSB
1 0 0 0 0 0 0 0 0 0
0
0 1 1 1 1 1 1 1 1 1
0
1 1 0 0 0 0 0 0 0 0
0
0 1 0 0 0 0 0 0 0 0
0
–124.75 mV
–124.25 mV
1/4 full-scale + LSB
1/4 full-scale - LSB
0 1 0 0 0 0 0 0 0 0
0
0 0 1 1 1 1 1 1 1 1
0
0 1 1 0 0 0 0 0 0 0
0
0 0 1 0 0 0 0 0 0 0
0
–249.75 mV
–250.25 mV
Bottom end of full-scale + LSB
Bottom end of full-scale - LSB
0 0 0 0 0 0 0 0 0 1
0
0 0 0 0 0 0 0 0 0 0
0
0 0 0 0 0 0 0 0 0 1
0
0 0 0 0 0 0 0 0 0 0
0
< –250.25 mV
< Bottom end of full-scale - LSB
0 0 0 0 0 0 0 0 0 0
1
0 0 0 0 0 0 0 0 0 0
1
Table 3-9.
Die Mechanical Information
Description
Data
Die size
3740 m x 3820 m (±15 m)
Pad size
- single pad
- double pad
90 m x 90 m
180 m x 90 m
Die thickness
380 m ±25 m
Back side metallization
None
Metallization
- number of layers
- material
3
AlCu
Pad metallization
AlCu
Passivation
Oxyde nitride
Back side potential
–5V
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