- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄300083 > V59C1G01408QAJ37E (PROMOS TECHNOLOGIES INC) 256M X 4 DDR DRAM, 0.5 ns, PBGA68 PDF資料下載
參數(shù)資料
| 型號(hào)： | V59C1G01408QAJ37E |
| 廠商： | PROMOS TECHNOLOGIES INC |
| 元件分類： | DRAM |
| 英文描述： | 256M X 4 DDR DRAM, 0.5 ns, PBGA68 |
| 封裝： | ROHS COMPLIANT, FBGA-68 |
| 文件頁(yè)數(shù)： | 67/79頁(yè) |
| 文件大?。?/td> | 1029K |
| 代理商： | V59C1G01408QAJ37E |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)當(dāng)前第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)
7
ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QA
V59C1G01(408/808/168)QA Rev. 1.2 April 2008
Self
Idle
Setting
EMRS
Bank
Precharging
Power
Writing
ACT
RDA
Read
SRF
REF
CKEL
MRS
CKEH
CKEL
Write
Automatic Sequence
Command Sequence
RDA
WRA
Read
PR, PRA
PR
Refreshing
Down
Power
Down
Active
with
RDA
Reading
with
WRA
Active
Precharge
Reading
Writing
PR(A) = Precharge (All)
MRS = (Extended) Mode Register Set
SRF = Enter Self Refresh
REF = Refresh
CKEL = CKE low, enter Power Down
CKEH = CKE high, exit Power Down, exit Self Refresh
ACT = Activate
WR(A) = Write (with Autoprecharge)
RD(A) = Read (with Autoprecharge)
Note: Use caution with this diagram. It is indented to provide a floorplan of the possible state transitions
Simplified State Diagram
All banks
precharged
Activating
CKEH
Read
Write
CKEL
MRS
CKEL
Sequence
Initialization
OCD
calibration
CKEL
Autoprecharge
PR, PRA
and the commands to control them, not all details. In particular situations involving more than one bank,
enabling/disabling on-die termination, Power Down enty/exit - among other things - are not captured
in full detail.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| V59C1G01408QAJ37I | 256M X 4 DDR DRAM, 0.5 ns, PBGA68 |
| V5D010EB4D | SNAP ACTING/LIMIT SWITCH, SPDT, MOMENTARY, 0.5A, 125VDC, 4.4mm, PANEL MOUNT |
| V5F110CB | SNAP ACTING/LIMIT SWITCH, SPDT, MOMENTARY, PANEL MOUNT |
| V5PNF | CABLE TERMINATED, FEMALE, N CONNECTOR, THREAD-IN STUB SELF-FLARE |
| V5T110TB3 | SNAP ACTING/LIMIT SWITCH, SPDT, MOMENTARY, 0.6A, 125VDC, 2.4mm, PANEL MOUNT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| V5A010CB | 制造商:Honeywell Sensing and Control 功能描述:MICROSWITCH V5 PIN PLUNGER |
| V5A010CB | 制造商:Honeywell Sensing and Control 功能描述:MICROSWITCH V5 PIN PLUNGER |
| V5A010CB4D | 制造商:Honeywell Sensing and Control 功能描述:MICROSWITCH V5 ROLLER LEVER |
| V5A010CB4D | 制造商:Honeywell Sensing and Control 功能描述:MICROSWITCH V5 ROLLER LEVER |
| V5A010CB4E | 制造商:Honeywell Sensing and Control 功能描述:MICROSWITCH V5 ROLLER LEVER |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。