參數(shù)資料
型號(hào): W9425G6EH-4
廠商: WINBOND ELECTRONICS CORP
元件分類(lèi): DRAM
英文描述: 16M X 16 DDR DRAM, 0.7 ns, PDSO66
封裝: 0.400 INCH, ROHS COMPLIANT, TSOP2-66
文件頁(yè)數(shù): 11/54頁(yè)
文件大?。?/td> 0K
代理商: W9425G6EH-4
W9425G6EH
Publication Release Date:Dec. 03, 2008
- 19 -
Revision A08
8.2 Function Truth Table
(Note 1)
CURRENT
STATE
CS RAS CAS
WE
ADDRESS
COMMAND
ACTION
NOTES
H
X
DSL
NOP
L
H
X
NOP/BST
NOP
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
H
BA, RA
ACT
Row activating
L
H
L
BA, A10
PRE/PREA
NOP
L
H
X
AREF/SELF
Refresh or Self refresh
2
Idle
L
Op-Code
MRS/EMRS
Mode register accessing
2
H
X
DSL
NOP
L
H
X
NOP/BST
NOP
L
H
L
H
BA, CA, A10
READ/READA
Begin read: Determine AP
4
L
H
L
BA, CA, A10
WRIT/WRITA
Begin write: Determine AP
4
L
H
BA, RA
ACT
ILLEGAL
3
L
H
L
BA, A10
PRE/PREA
Precharge
5
L
H
X
AREF/SELF
ILLEGAL
Row Active
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
DSL
Continue burst to end
L
H
X
NOP
Continue burst to end
L
H
L
X
BST
Burst stop
L
H
L
H
BA, CA, A10
READ/READA
Term burst, new read: Determine AP
6
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
L
H
BA, RA
ACT
ILLEGAL
3
L
H
L
BA, A10
PRE/PREA
Term burst, precharging
L
H
X
AREF/SELF
ILLEGAL
Read
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
DSL
Continue burst to end
L
H
X
NOP
Continue burst to end
L
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
Term burst, start read: Determine AP
6, 7
L
H
L
BA, CA, A10
WRIT/WRITA
Term burst, start read: Determine AP
6
L
H
BA, RA
ACT
ILLEGAL
3
L
H
L
BA, A10
PRE/PREA
Term burst, precharging
8
L
H
X
AREF/SELF
ILLEGAL
Write
L
Op-Code
MRS/EMRS
ILLEGAL
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