- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄68747 > W9425G6EH-4 (WINBOND ELECTRONICS CORP) 16M X 16 DDR DRAM, 0.7 ns, PDSO66 PDF資料下載
參數(shù)資料
| 型號(hào)： | W9425G6EH-4 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 16M X 16 DDR DRAM, 0.7 ns, PDSO66 |
| 封裝： | 0.400 INCH, ROHS COMPLIANT, TSOP2-66 |
| 文件頁數(shù)： | 54/54頁 |
| 文件大?。?/td> | 0K |
| 代理商： | W9425G6EH-4 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁當(dāng)前第54頁
W9425G6EH
Publication Release Date:Dec. 03, 2008
- 9 -
Revision A08
7. FUNCTIONAL DESCRIPTION
7.1 Power Up Sequence
(1) Apply power and attempt to CKE at a low state (
≤ 0.2V), all other inputs may be undefined
1) Apply VDD before or at the same time as VDDQ.
2) Apply VDDQ before or at the same time as VTT and VREF.
(2) Start Clock and maintain stable condition for 200 S (min.).
(3) After stable power and clock, apply NOP and take CKE high.
(4) Issue precharge command for all banks of the device.
(5) Issue EMRS (Extended Mode Register Set) to enable DLL and establish Output Driver Type.
(6) Issue MRS (Mode Register Set) to reset DLL and set device to idle with bit A8.
(An additional 200 cycles(min) of clock are required for DLL Lock before any executable
command applied.)
(7) Issue precharge command for all banks of the device.
(8) Issue two or more Auto Refresh commands.
(9) Issue MRS-Initialize device operation with the reset DLL bit deactivated A8 to low.
2 Clock min.
tRFC
MRS
CLK
Command
ANY
CMD
AREF
PREA
MRS
EMRS
PREA
CLK
tRFC
tRP
Enable DLL
DLL reset with A8 = High
Disable DLL reset with A8 = Low
200 Clock min.
2 Clock min.
Inputs
maintain stable
for 200 S min.
Initialization sequence after power-up
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W9864G6GB-6I | 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PBGA60 |
| WE256K32-250G2TMEA | 256K X 32 EEPROM 5V MODULE, 250 ns, CQFP68 |
| WE256K32-200G2TCE | 256K X 32 EEPROM 5V MODULE, 200 ns, CQFP68 |
| WE256K32-300G2TIE | 256K X 32 EEPROM 5V MODULE, 300 ns, CQFP68 |
| WE256K32-150G2TCEA | 256K X 32 EEPROM 5V MODULE, 150 ns, CQFP68 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W9425G6EH-5 | 功能描述:IC DDR-400 SDRAM 256MB 66TSSOPII RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
| W9425G6EH-5I | 制造商:Winbond Electronics Corp 功能描述: |
| W9425G6JB-5 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY 制造商:Winbond 功能描述:16MX16,256Mb DDRI DRAM ,200MHZ, BGA |
| W9425G6JB-5 TR | 制造商:Winbond Electronics Corp 功能描述:256M DDR SDRAM X16, 200MHZ |
| W9425G6JB-5I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。