參數(shù)資料
型號: W9425G6EH-4
廠商: WINBOND ELECTRONICS CORP
元件分類: DRAM
英文描述: 16M X 16 DDR DRAM, 0.7 ns, PDSO66
封裝: 0.400 INCH, ROHS COMPLIANT, TSOP2-66
文件頁數(shù): 38/54頁
文件大?。?/td> 0K
代理商: W9425G6EH-4
W9425G6EH
Publication Release Date:Dec. 03, 2008
- 43 -
Revision A08
11.9 Auto-precharge Timing (Read cycle, CL = 2), continued
2) tRCD/RAP(min)
≤ tRCD (READA) < tRAS (min) – (BL/2) × tCK
AP
Q7
Q6
Q5
Q4
Q3
Q2
Q1
Q0
ACT
READA
ACT
Q0
Q1
Q2
Q3
ACT
READA
ACT
Q0
Q1
ACT
AP
READA
ACT
tRP
tRAS
CMD
DQS
DQ
CMD
DQS
DQ
CMD
DQS
DQ
BL=2
BL=4
BL=8
CLK
AP
tRAP
tRCD
tRAP
tRCD
tRAP
tRCD
Notes: CL2 shown; same command operation timing with CL = 2.5, CL=3.
In this case, the internal precharge operation does not begin until after tRAS (min) has command.
AP
Represents the start of internal precharging.
The Read with Auto-precharge command cannot be interrupted by any other command.
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