參數(shù)資料
型號(hào)： WEDPNF8M722V-XBX
英文描述： 8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module(8Mx72同步動(dòng)態(tài)RAM+16M位閃速存儲(chǔ)器混合型模塊)
中文描述： 8Mx72同步DRAM 16Mb的閃存混合模塊（8Mx72同步動(dòng)態(tài)RAM的1,600位閃速存儲(chǔ)器混合型模塊）
文件頁(yè)數(shù)： 14/41頁(yè)
文件大小： 522K
代理商： WEDPNF8M722V-XBX
14
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WEDPNF8M722V-XBX
NOTES:
1. The minimum specifications are used only to indicate cycle time at which
proper operation over the full temperature range is ensured.
2. An initial pause of 100ms is required after power-up, followed by two
AUTO REFRESH commands, before proper device operation is ensured.
(V
CC
must be powered up simultaneously.) The two AUTO REFRESH
command wake-ups should be repeated any time the t
REF
refresh require-
ment is exceeded.
3. AC characteristics assume t
T
= 1ns.
4. In addition to meeting the transition rate specification, the clock and CKE
must transit between V
IH
and V
IL
(or between V
IL
and V
IH
) in a monotonic
manner.
5. Outputs measured at 1.5V with equivalent load:
6. AC timing and I
CC
tests have V
IL
= 0V and V
IH
= 3V, with timing referenced
to 1.5V crossover point.
7. Timing actually specified by t
CKS
; clock(s) specified as a reference only at
minimum cycle rate.
8. Timing actually specified by t
WR
plus t
RP
; clock(s) specified as a reference
only at minimum cycle rate.
9. Timing actually specified by t
WR
.
10. Required clocks are specified by JEDEC functionality and are not depen-
dent on any timing parameter.
11. JEDEC and PC100 specify three clocks.
Q
50pF
SDRAM AC FUNCTIONAL CHARACTERISTICS
(Notes 1,2,3,4,5,6)
Parameter/Condition
READ/WRITE command to READ/WRITE command (10)
CKE to clock disable or power-down entry mode (7)
CKE to clock enable or power-down exit setup mode (7)
DQM to input data delay (10)
DQM to data mask during WRITEs
DQM to data high-impedance during READs
WRITE command to input data delay (10)
Data-in to ACTIVE command (8)
Data-in to PRECHARGE command (9)
Last data-in to burst STOP command (10)
Last data-in to new READ/WRITE command (10)
Last data-in to PRECHARGE command (9)
LOAD MODE REGISTER command to ACTIVE or REFRESH command (11)
Symbol
t
CCD
t
CKED
t
PED
t
DQD
t
DQM
t
DQZ
t
DWD
t
DAL
t
DPL
t
BDL
t
CDL
t
RDL
t
MRD
t
ROH
t
ROH
-100
1
1
1
0
0
2
0
4
2
1
1
2
2
3
2
-125
1
1
1
0
0
2
0
5
2
1
1
2
2
3
—
Units
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
Data-out to high-impedance from PRECHARGE command (10)
CL = 3
CL = 2
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