參數(shù)資料
型號: 28F008SC
廠商: Intel Corp.
英文描述: 8-MBIT SmartVoltage FlashFile Memory(8M位智能電壓閃速存儲器)
中文描述: 8兆SmartVoltage FlashFile內(nèi)存(800萬位智能電壓閃速存儲器)
文件頁數(shù): 31/42頁
文件大?。?/td> 725K
代理商: 28F008SC
E
6.4
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY
31
PRELIMINARY
DC Characteristics
—Commercial Temperature
2.7V V
CC
3.3V V
CC
5V V
CC
Test
Sym
Parameter
Notes Typ Max Typ Max Typ Max Unit
Conditions
I
LI
Input Load Current
1
±
0.5
±
0.5
±
1
μ
A V
CC
= V
CC
Max, V
IN
= V
CC
or GND
I
LO
I
CCS
Output Leakage Current
1
±
0.5
±
0.5
±
10
μ
A V
CC
= V
CC
Max, V
OUT
= V
CC
or GND
V
CC
Standby Current
1,3,6
20
100
20
100
25
100
μ
A CMOS Inputs
V
CC
= V
CC
Max
CE# = RP# = V
CC
± 0.2 V
mA TTL Inputs
V
CC
= V
CC
Max, CE# = RP# = V
IH
μ
A RP# = GND ± 0.2 V
I
OUT
(RY/BY#) = 0 mA
0.1
2
0.2
2
0.4
2
I
CCD
V
CC
Deep Power-
Down Current
1
10
10
10
I
CCR
V
CC
Read Current
1,5,6
6
12
7
12
17
35
mA CMOS Inputs
V
CC
= V
CC
Max, CE# = GND
f = 5 MHz (2.7 V, 3.3 V), 8 MHz (5 V)
I
OUT
= 0 mA
mA TTL Inputs
V
CC
= V
CC
Max, CE# = GND
f = 5 MHz (2.7 V, 3.3 V), 8 MHz (5 V)
I
OUT
= 0 mA
mA V
PP
= 3.3 V ± 0.3 V
7
18
8
18
20
50
I
CCW
V
CC
Program or
Set Lock-Bit Current
1,7
17
17
35
mA V
PP
= 5 V ± 10%
12
30
mA V
PP
= 12 V ± 5%
I
CCE
V
CC
Block Erase or
Clear Block
1,7
17
mA V
PP
= 3.3 V ± 0.3 V
17
30
mA V
PP
= 5 V ± 10%
Lock-Bits Current
12
25
mA V
PP
= 12 V ± 5%
I
CCWS
I
CCES
V
CC
Program or Block
Erase Suspend Current
1,2
1
6
1
10
mA CE# = V
IH
I
PPS
V
PP
Standby Current
1
±2
±15
±2
±15
± 2
±15
μA V
PP
V
CC
I
PPR
V
PP
Read Current
1
10
200
10
200
10
200
μA V
PP
> V
CC
I
PPD
V
PP
Deep Power-Down
Current
1
0.1
5
0.1
5
0.1
5
μA RP# = GND ± 0.2 V
I
PPW
V
PP
Program/ Set
Lock-Bit Current
1,7
40
mA V
PP
= 3.3 V ± 0.3 V
40
40
mA V
PP
= 5 V ± 10%
15
15
mA V
PP
= 12 V ± 5%
I
PPE
V
PP
Block Erase/Clear
Block Lock-Bits
1,7
20
mA V
PP
= 3.3 V ± 0.3 V
20
20
mA V
PP
= 5 V ± 10%
Current
15
15
mA V
PP
= 12 V ± 5%
I
PPWS
I
PPES
V
Program/ Block Erase
Suspend Current
1
10
200
10
200
μA V
PP
= V
PPH1/2/3
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