參數(shù)資料
型號: 28F008SC
廠商: Intel Corp.
英文描述: 8-MBIT SmartVoltage FlashFile Memory(8M位智能電壓閃速存儲器)
中文描述: 8兆SmartVoltage FlashFile內(nèi)存(800萬位智能電壓閃速存儲器)
文件頁數(shù): 5/42頁
文件大?。?/td> 725K
代理商: 28F008SC
E
1.0
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY
5
PRELIMINARY
INTRODUCTION
This datasheet contains 4-, 8-, and 16-Mbit
SmartVoltage FlashFile memory specifications.
Section 1.0 provides a flash memory overview.
Sections 2.0, through 5.0 describe the memory
organization and functionality. Section 6.0 covers
electrical
specifications
extended temperature product offerings. Section
7.0 contains ordering information. Finally, the byte-
wide SmartVoltage FlashFile memory family
documentation also includes application notes and
design tools which are referenced in Section 8.0.
for
commercial
and
1.1
New Features
The byte-wide SmartVoltage FlashFile memory
family
maintains
backwards-compatibility
Intel’s
28F008SA
and
enhancements include:
with
Key
28F008SA-L.
SmartVoltage Technology
Enhanced Suspend Capabilities
In-System Block Locking
They share a compatible status register, software
commands, and pinouts. These similarities enable
a clean upgrade from the 28F008SA and
28F008SA-L to byte-wide SmartVoltage FlashFile
products. When upgrading, it is important to note
the following differences:
Because of new feature and density options,
the devices have different device identifier
codes. This allows for software optimization.
V
PPLK
has been lowered from 6.5 V to 1.5 V to
support low V
PP
voltages during block erase,
program, and lock-bit configuration operations.
Designs that switch V
PP
off during read
operations should transition V
PP
to GND.
To take advantage of SmartVoltage tech-
nology, allow V
PP
connection to 3.3 V or 5 V.
For more details see application note
AP-625,
28F008SC Compatibility with 28F008SA
(order
number 292180)
.
1.2
Product Overview
The byte-wide SmartVoltage FlashFile memory
family provides density upgrades with pinout
compatibility for the 4-, 8-, and 16-Mbit densities.
The 28F004SC, 28F008SC, and 28F016SC are
high-performance
memories
512 Kbyte, 1 Mbyte, and 2 Mbyte of 8 bits. This
data is grouped in eight, sixteen, and thirty-two
64-Kbyte blocks which are individually erasable,
lockable, and unlockable in-system. Figure 4
illustrates the memory organization.
arranged
as
SmartVoltage technology enables fast factory
programming and low-power designs. These
components support read operations at 2.7 V (read-
only), 3.3 V, and 5 V V
CC
and block erase and
program operations at 3.3 V, 5 V, and 12 V V
PP
.
The 12 V V
PP
option renders the fastest program
and erase performance which will increase your
factory throughput. With the 3.3 V and 5 V V
PP
option, V
CC
and V
PP
can be tied together for a
simple and voltage flexible design. This voltage
flexibility is key for removable media that need to
operate in a 3 V to 5 V system. In addition, the
dedicated V
PP
pin gives complete data protection
when V
PP
V
PPLK
.
Table 1. SmartVoltage Flash
V
CC
and V
PP
Voltage Combinations
V
CC
Voltage
V
PP
Voltage
2.7 V
(1)
3.3 V
3.3 V, 5 V, 12 V
5 V
5 V, 12 V
NOTE:
1.
Block erase, program, and lock-bit configuration
operation with V
CC
, 3.0 V are not supported.
Internal
automatically configures the device for optimum
performance.
V
CC
and
V
PP
detection
circuitry
A Command User Interface (CUI) serves as the
interface between the system processor and
internal operation of the device. A valid command
sequence written to the CUI initiates device
automation. An internal Write State Machine (WSM)
automatically executes the algorithms and timings
necessary for block erase, program, and lock-bit
configuration operations.
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