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參數(shù)資料
| 型號： | 28F008SC |
| 廠商： | Intel Corp. |
| 英文描述： | 8-MBIT SmartVoltage FlashFile Memory(8M位智能電壓閃速存儲器) |
| 中文描述： | 8兆SmartVoltage FlashFile內(nèi)存（800萬位智能電壓閃速存儲器） |
| 文件頁數(shù)： | 6/42頁 |
| 文件大?。?/td> | 725K |
| 代理商： | 28F008SC |
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BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY
E
6
PRELIMINARY
A block erase operation erases one of the device’s
64-Kbyte
blocks
typically
(5 V V
CC
, 12 V V
PP
), independent of other blocks.
Each block can be independently erased 100,000
times (1.6 million block erases per device). A block
erase suspend operation allows system software to
suspend block erase to read data from or write data
to any other block.
within
1
second
Data is programmed in byte increments typically
within 6
μ
s (5 V V
CC
, 12 V V
PP
). A program
suspend operation permits system software to read
data or execute code from any other flash memory
array location.
To protect programmed data, each block can be
locked. This block locking mechanism uses a
combination of bits, block lock-bits and a master
lock-bit, to lock and unlock individual blocks. The
block lock-bits gate block erase and program
operations, while the master lock-bit gates block
lock-bit configuration operations. Lock-bit config-
uration operations (Set Block Lock-Bit, Set Master
Lock-Bit, and Clear Block Lock-Bits commands) set
and clear lock-bits.
The status register and RY/BY# output indicate
whether or not the device is busy executing or
ready for a new command. Polling the status
register, system software retrieves WSM feedback.
The RY/BY# output gives an additional indicator of
WSM activity by providing a hardware status signal.
Like the status register, RY/BY#-low indicates that
the WSM is performing a block erase, program, or
lock-bit
configuration
operation.
indicates that the WSM is ready for a new
command, block erase is suspended (and program
is inactive), program is suspended, or the device is
in deep power-down mode.
RY/BY#-high
The Automatic Power Savings (APS) feature
substantially reduces active current when the
device is in static mode (addresses not switching).
In APS mode, the typical I
CCR
current is 1 mA at
5 V V
CC
.
When CE# and RP# pins are at V
CC
, the
component enters a CMOS standby mode. Driving
RP# to GND enables a deep power-down mode
which significantly reduces power consumption,
provides write protection, resets the device, and
clears the status register. A reset time (t
PHQV
) is
required from RP# switching high until outputs are
valid. Likewise, the device has a wake time (t
PHEL
)
from RP#-high until writes to the CUI are
recognized.
1.3
Pinout and Pin Description
The family of devices is available in 40-lead TSOP
(Thin Small Outline Package, 1.2 mm thick) and
44-lead PSOP (Plastic Small Outline Package) and
40-bump
μ
BGA* CSP (28F008SC and 28F016SC
only). Pinouts are shown in Figures 2, 3 and 4.
相關PDF資料 |
PDF描述 |
|---|---|
| 28F016SC | 16-MBIT SmartVoltage FlashFile Memory(16M位智能電壓閃速存儲器) |
| 28F008S | 8-MBit (1 MBit x 8) FLASHFILE Memory(8-M位 (1 M位 x 8)閃速存儲器) |
| 28F0101024K | 28F010 1024K (128K X 8) CMOS FLASH MEMORY |
| 28F010 | 1024K (128K x 8) CMOS FLASH MEMORY |
| 28F016B3 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F010 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1024K (128K x 8) CMOS FLASH MEMORY |
| 28F0101024K | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F010 1024K (128K X 8) CMOS FLASH MEMORY |
| 28F010120EI | 制造商:Advanced Micro Devices 功能描述: |
| 28F010-120EI | 制造商:undefined 功能描述: |
| 28F010120JC | 制造商: 功能描述: 制造商:Advanced Micro Devices 功能描述: 制造商:undefined 功能描述: |
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