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參數(shù)資料
| 型號(hào)： | 28F0101024K |
| 廠商： | Intel Corp. |
| 英文描述： | 28F010 1024K (128K X 8) CMOS FLASH MEMORY |
| 中文描述： | 28F010 1024K（128K的× 8）的CMOS閃存 |
| 文件頁(yè)數(shù)： | 11/33頁(yè) |
| 文件大?。?/td> | 895K |
| 代理商： | 28F0101024K |
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E
28F010
11
Table 3. Command Definitions
First Bus Cycle
Second Bus Cycle
Command
Bus
Cycles
Req’d
Operation
(1)
Address
(2)
Data
(3)
Operation
(1)
Address
(2)
Data
(3)
Read Memory
1
Write
X
00H
Read Intelligent
Identifier Codes
(4)
3
Write
IA
90H
Read
IA
ID
Set-Up
Erase/Erase
(5)
2
Write
X
20H
Write
X
20H
Erase Verify
(5)
2
Write
EA
A0H
Read
X
EVD
Set-Up Program/
Program
(6)
2
Write
X
40H
Write
PA
PD
Program Verify
(6)
2
Write
X
C0H
Read
X
PVD
Reset
(7)
2
Write
X
FFH
Write
X
FFH
NOTES:
1.
2.
Bus operations are defined in Table 2.
IA = Identifier address: 00H for manufacturer code, 01H for device code.
EA = Erase Address: Address of memory location to be read during erase verify.
PA = Program Address: Address of memory location to be programmed.
Addresses are latched on the falling edge of the WE# pulse.
ID = Identifier Data: Data read from location IA during device identification (Mfr = 89H, Device = B4H).
EVD = Erase Verify Data: Data read from location EA during erase verify.
PD = Program Data: Data to be programmed at location PA. Data is latched on the rising edge of WE#.
PVD = Program Verify Data: Data read from location PA during program verify. PA is latched on the Program command.
Following the Read Intelligent ID command, two read operations access manufacturer and device codes.
Figure 5 illustrates the 28F010 Quick-Erase Algorithmflowchart.
Figure 4 illustrates the 28F010 Quick-Pulse Programming Algorithmflowchart.
The second bus cycle must be followed by the desired command register write.
3.
4.
5.
6.
7.
2.2.2.1
Read Command
While V
PP
is high, for erasure and programming,
memory contents can be accessed via the Read
command. The read operation is initiated by writing
00H into the command register. Microprocessor
read cycles retrieve array data. The device remains
enabled for reads until the command register
contents are altered.
The default contents of the register upon V
PP
power-up is 00H. This default value ensures that no
spurious alteration of memory contents occurs
during the V
PP
power transition. Where the V
PP
supply is hardwired to the 28F010, the device
powers-up and remains enabled for reads until the
command register contents are changed. Refer to
the AC Characteristics
—Read-Only Operations
and
waveforms for specific timing parameters.
2.2.2.2
Intelligent Identifier Command
Flash memories are intended for use in applications
where the local CPU alters memory contents. As
such, manufacturer and device codes must be
accessible while the device resides in the target
system. PROM programmers typically access
signature codes by raising A
9
to a high voltage.
However, multiplexing high voltage onto address
lines is not a desired system design practice.
The 28F010 contains an intelligent identifier
operation
to
supplement
programming methodology. The operation is
initiated by writing 90H into the command register.
Following the command Write, a read cycle from
address 0000H retrieves the manufacturer code of
89H. A read cycle from address 0001H returns the
device code of B4H. To terminate the operation, it
traditional
PROM-
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| 28F0121-0SR | 功能描述:FERRITE 10A 48 OHM SMD RoHS:否 類(lèi)別:濾波器 >> 鐵氧體磁珠和芯片 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:EMI1812 頻率對(duì)應(yīng)阻抗:120 歐姆 @ 100MHz 額定電流:200mA DC 電阻(DCR):最大 400 毫歐 濾波器類(lèi)型:差模 - 單線 封裝/外殼:1812（4532 公制） 安裝類(lèi)型:表面貼裝 包裝:帶卷 (TR) 高度（最大）:0.069"（1.75mm） 尺寸/尺寸:0.177" L x 0.126" W（4.50mm x 3.20mm） 其它名稱(chēng):Q1712807A |
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