參數(shù)資料
型號: 28F0101024K
廠商: Intel Corp.
英文描述: 28F010 1024K (128K X 8) CMOS FLASH MEMORY
中文描述: 28F010 1024K(128K的× 8)的CMOS閃存
文件頁數(shù): 21/33頁
文件大?。?/td> 895K
代理商: 28F0101024K
E
4.5
28F010
21
DC Characteristics
—CMOS Compatible—Commercial Products
(Continued)
Limits
Symbol
Parameter
Notes
Min
Typ
(3)
Max
Unit
Test Conditions
I
PP1
V
PP
Read Current, ID
Current or Standby
Current
1
90
200
μA
V
PP
> V
CC
±10
V
PP
V
CC
I
PP2
V
PP
Programming Current
1, 2
8.0
30
mA
V
PP
> = V
PPH
Programming in Progress
I
PP3
V
PP
Erase Current
1, 2
6.0
30
mA
V
PP
= V
PPH
Erasure in Progress
I
PP4
V
PP
Program Verify
Current
1, 2
2.0
5.0
mA
V
PP
= V
PPH
Program Verify in Progress
I
PP5
V
PP
Erase Verify Current
1, 2
2.0
5.0
mA
V
PP
= V
PPH
Erase Verify in Progress
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
0.7
V
CC
V
CC
+ 0.5
V
V
OL
Output Low Voltage
0.45
V
V
CC
= V
CC
Min
I
OL
= 5.8 mA
V
OH1
Output High Voltage
0.85
V
CC
V
V
CC
= V
CC
Min
I
OH
= –2.5 mA
V
OH2
V
CC
– 0.4
V
CC
= V
CC
Min
I
OH
= –100 μA
V
ID
A
9
Intelligent Identifier
Voltage
11.50
13.00
V
I
ID
A
9
Intelligent Identifier
Current
1, 2
90
200
μA
A
9
= V
ID
V
PPL
V
PP
during Read-Only
Operations
0.00
6.5
V
NOTE:
Erase/Programs are
Inhibited when V
PP
= V
PPL
V
PPH
V
PP
during Read/Write
Operations
11.40
12.60
V
V
LKO
V
CC
Erase/Write Lock
Voltage
2.5
V
NOTES:
Refer to Section 4.4.
相關(guān)PDF資料
PDF描述
28F010 1024K (128K x 8) CMOS FLASH MEMORY
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