參數(shù)資料
型號: 28F0101024K
廠商: Intel Corp.
英文描述: 28F010 1024K (128K X 8) CMOS FLASH MEMORY
中文描述: 28F010 1024K(128K的× 8)的CMOS閃存
文件頁數(shù): 17/33頁
文件大?。?/td> 895K
代理商: 28F0101024K
E
28F010
17
Table 4. 28F010 Typical Update Power Dissipation
(4)
Operation
Notes
Power Dissipation (Watt-Seconds)
Array Program/Program Verify
1
0.171
Array Erase/Erase Verify
2
0.136
One Complete Cycle
3
0.478
NOTES:
1.
Formula to calculate typical Program/Program Verify Power = [V
PP
× # Bytes × typical # Prog Pulses (t
× I
PP2
typical
+ t
WHGL
× I
PP4
typical)] + [V
CC
× # Bytes × typical # Prog Pulses (t
WHWH1
× I
CC2
typical + t
WHGL
× I
CC4
typical].
Formula to calculate typical Erase/Erase Verify Power = [V
PP
(V
PP3
typical × t
ERASE
typical + I
PP5
typical × t
WHGL
× #
Bytes)] + [V
CC
(I
CC3
typical × t
ERASE
typical + I
CC5
typical × t
WHGL
One Complete Cycle = Array Preprogram + Array Erase + Program.
“Typicals” are not guaranteed, but based on a limited number of samples from production lots.
2.
3.
4.
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