參數(shù)資料
型號(hào)： 28F010
廠商： Intel Corp.
英文描述： 1024K (128K x 8) CMOS FLASH MEMORY
中文描述： 1024K（128K的× 8）的CMOS閃存
文件頁(yè)數(shù)： 4/30頁(yè)
文件大?。?/td> 405K
代理商： 28F010
28F010
APPLICATIONS
The 28F010 flash memory provides nonvolatility
along with the capability to perform over 100,000
electrical chip-erasure/reprogram cycles. These fea-
tures make the 28F010 an innovative alternative to
disk, EEPROM, and battery-backed static RAM.
Where periodic updates of code and data-tables are
required, the 28F010’s reprogrammability and non-
volatility make it the obvious and ideal replacement
for EPROM.
Primary applications and operating systems stored
in flash eliminate the slow disk-to-DRAM download
process. This results in dramatic enhancement of
performance and substantial reduction of power
consumption D a consideration particularly impor-
tant in portable equipment. Flash memory increases
flexibility with electrical chip erasure and in-system
update capability of operating systems and applica-
tion code. With updatable code, system manufactur-
ers can easily accommodate last-minute changes as
revisions are made.
In diskless workstations and terminals, network traf-
fic reduces to a minimum and systems are instant-
on. Reliability exceeds that of electromechanical
media. Often in these environments, power interrup-
tions force extended re-boot periods for all net-
worked terminals. This mishap is no longer an issue
if boot code, operating systems, communication pro-
tocols and primary applications are flash-resident in
each terminal.
For embedded systems that rely on dynamic RAM/
disk for main system memory or nonvolatile backup
storage, the 28F010 flash memory offers a solid
state alternative in a minimal form factor. The
28F010 provides higher performance, lower power
consumption, instant-on capability, and allows an
‘‘execute in place’’ memory hierarchy for code and
data table reading. Additionally, the flash memory is
more rugged and reliable in harsh environments
where extreme temperatures and shock can cause
disk-based systems to fail.
The need for code updates pervades all phases of a
system’s life D from prototyping to system manufac-
ture to after-sale service. The electrical chip-erasure
and reprogramming ability of the 28F010 allows in-
circuit alterability; this eliminates unnecessary han-
dling and less-reliable socketed connections, while
adding greater test, manufacture, and update flexi-
bility.
Material and labor costs associated with code
changes increases at higher levels of system inte-
gration D the most costly being code updates after
sale. Code ‘‘bugs’’, or the desire to augment system
functionality, prompt after-sale code updates. Field
revisions to EPROM-based code requires the re-
moval of EPROM components or entire boards. With
the 28F010, code updates are implemented locally
via an edge-connector, or remotely over a commun-
cation link.
For systems currently using a high-density static
RAM/battery configuration for data accumulation,
flash memory’s inherent nonvolatility eliminates the
need for battery backup. The concern for battery
failure no longer exists, an important consideration
for portable equipment and medical instruments,
both requiring continuous performance. In addition,
flash memory offers a considerable cost advantage
over static RAM.
Flash memory’s electrical chip erasure, byte pro-
grammability and complete nonvolatility fit well with
data accumulation and recording needs. Electrical
chip-erasure gives the designer a ‘‘blank slate’’ in
which to log or record data. Data can be periodically
off-loaded for analysis and the flash memory erased
producing a new ‘‘blank slate’’.
A high degree of on-chip feature integration simpli-
fies memory-to-processor interfacing. Figure 4 de-
picts two 28F010s tied to the 80C186 system bus.
The 28F010’s architecture minimizes interface cir-
cuitry needed for complete in-circuit updates of
memory contents.
The outstanding feature of the TSOP (Thin Small
Outline Package) is the 1.2 mm thickness. With stan-
dard and reverse pin configurations, TSOP reduces
the number of board layers and overall volume nec-
essary to layout multiple 28F010s. TSOP is particu-
larly suited for portable equipment and applications
requiring large amounts of flash memory. Figure 3
illustrates the TSOP Serpentine layout.
With cost-effective in-system reprogramming, ex-
tended cycling capability, and true nonvolatility,
the 28F010 offers advantages to the alternatives:
EPROMs, EEPROMs, battery backed static RAM,
or disk. EPROM-compatible read specifications,
straight-forward interfacing, and in-circuit alterability
offers designers unlimited flexibility to meet the high
standards of today’s designs.
4
相關(guān)PDF資料
PDF描述
28F016B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F032B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F160B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F800B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F016SA16-MBIT Evaluation Kit/Evaluation System for the MAX5954L/MAX5954A
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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28F010-120EI 制造商:undefined 功能描述:
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