參數(shù)資料
型號(hào): 28F010
廠商: Intel Corp.
英文描述: 1024K (128K x 8) CMOS FLASH MEMORY
中文描述: 1024K(128K的× 8)的CMOS閃存
文件頁(yè)數(shù): 11/30頁(yè)
文件大?。?/td> 405K
代理商: 28F010
28F010
290207–5
Bus
Command
Comments
Operation
Standby
Wait for V
PP
Ramp to V
PPH
(1)
Initialize Pulse-Count
Write
Set-up
Program
Data
e
40H
Write
Program
Valid Address/Data
Standby
Duration of Program
Operation (t
WHWH1
)
Write
Program
(2)
Verify
Data
e
C0H; Stops Program
Operation
(3)
Standby
t
WHGL
Read
Read Byte to Verify
Programming
Standby
Compare Data Output to Data
Expected
Write
Read
Data
e
00H, Resets the
Register for Read Operations
Standby
Wait for V
PP
Ramp to V
PPL
(1)
NOTES:
1. See DC Characteristics for the value of V
PPH
and
V
PPL
.
2. Program Verify is only performed after byte program-
ming. A final read/compare may be performed (option-
al) after the register is written with the Read command.
3. Refer to principles of operation.
4. CAUTION: The algorithm MUST BE FOLLOWED
to ensure proper and reliable operation of the de-
vice.
Figure 5. 28F010 Quick Pulse Programming Algorithm
11
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