參數(shù)資料
型號: COP8CDR9KMT8
廠商: National Semiconductor
文件頁數(shù): 17/111頁
文件大小: 0K
描述: IC MCU EEPROM 8BIT 32K 56-TSSOP
標準包裝: 34
系列: COP8™ 8C
核心處理器: COP8
芯體尺寸: 8-位
速度: 20MHz
連通性: Microwire/Plus(SPI),UART/USART
外圍設備: POR,PWM,WDT
輸入/輸出數(shù): 49
程序存儲器容量: 32KB(32K x 8)
程序存儲器類型: 閃存
RAM 容量: 1K x 8
電壓 - 電源 (Vcc/Vdd): 2.7 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 16x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 56-TFSOP(0.240",6.10mm 寬)
包裝: 管件
其它名稱: *COP8CDR9KMT8
SNOS535I – OCTOBER 2000 – REVISED MARCH 2013
3.3
Electrical Characteristics AC Electrical Characteristics (
40°C ≤ T
A ≤ +85°C)
Datasheet min/max specification limits are ensured by design, test, or statistical analysis.
Parameter
Conditions
Min
Typ
Max
Units
Instruction Cycle Time (tC)
(1)
Crystal/Resonator
4.5V
≤ VCC ≤ 5.5V
0.5
DC
μs
2.7V
≤ VCC < 4.5V
1.5
DC
μs
Flash Memory Page Erase Time
See Table 5-12, Typical Flash
1
ms
Memory Endurance
Flash Memory Mass Erase Time
8
ms
Frequency of MICROWIRE/PLUS in Slave Mode
2
MHz
MICROWIRE/PLUS Setup Time (tUWS)
20
ns
MICROWIRE/PLUS Hold Time (tUWH)
20
ns
MICROWIRE/PLUS Output Propagation Delay (tUPD)
150
ns
Input Pulse Width
Interrupt Input High Time
1
tC
Interrupt Input Low Time
1
tC
Timer 1 Input High Time
1
tC
Timer 1 Input Low Time
1
tC
Timer 2, 3 Input High Time(2)
1
MCLK or tC
Timer 2, 3 Input Low Time(2)
1
MCLK or tC
Output Pulse Width
Timer 2, 3 Output High Time
150
ns
Timer 2, 3 Output Low Time
150
ns
USART Bit Time when using External CKX
6 CKI
periods
USART CKX Frequency when being
2
MHz
Driven by Internal Baud Rate Generator
Reset Pulse Width
1
tC
(1)
tC = instruction cycle time.
(2)
If timer is in high speed mode, the minimum time is 1 MCLK. If timer is not in high speed mode, the minimum time is 1 tC.
3.4
A/D Converter Electrical Characteristics (
40°C ≤ T
A ≤ +85°C unless otherwise noted)
(Single-ended mode only)
Datasheet min/max specification limits are ensured by design, test, or statistical analysis.
Parameter
Conditions
Min
Typ
Max
Units
Resolution
10
Bits
DNL
VCC = 5V
±1
LSB
DNL
VCC = 3V,20°C ≤ TA
±1
LSB
+85°C
INL
VCC = 5V
±3
LSB
INL
VCC = 3V,20°C ≤ TA
±4
LSB
+85°C
Offset Error
VCC = 5V
+2.5,
1
LSB
Offset Error
VCC = 3V,20°C ≤ TA
±2.5
LSB
+85°C
Gain Error
VCC = 5V
+0.5,
2.5
LSB
Gain Error
VCC = 3V,20°C ≤ TA
±2.5
LSB
+85°C
Input Voltage Range
2.7V
≤ VCC < 5.5V
0
VCC
V
Analog Input Leakage Current
0.5
A
Analog Input Resistance(1)
6k
(1)
Resistance between the device input and the internal sample and hold capacitance.
Copyright 2000–2013, Texas Instruments Incorporated
Electrical Specifications
13
Product Folder Links: COP8CBR9 COP8CCR9 COP8CDR9
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