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參數(shù)資料
| 型號： | CY7C1347D-250BGC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 128K X 36 CACHE SRAM, 2.4 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 2.40 MM HEIGHT, FBGA-119 |
| 文件頁數(shù)： | 7/21頁 |
| 文件大?。?/td> | 2790K |
| 代理商： | CY7C1347D-250BGC |
CY7C1347D
Document #: 38-05022 Rev. *E
Page 15 of 21
Capacitance[12]
Parameter
Description
Test Conditions
Typ.
Max.
Unit
CI
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = 3.3V
57
pF
CO
Input/Output Capacitance (DQ)
7
8
pF
Thermal Resistance
Parameter
Description
Test Conditions
TQFP Typ.
BGA Typ.
Unit
ΘJA
Thermal Resistance (Junction to Ambient) Still Air, soldered on a 4.25 x
1.125 inch, 4-layer PCB
25
50
°C/W
ΘJC
Thermal Resistance (Junction to Case)
9
8
°C/W
AC Test Loads and Waveforms[21]
Switching Characteristics Over the Operating Range[22]
Parameter
Description
250 MHz
225 MHz
200 MHz
166 MHz
Unit
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Clock
tKC
Clock Cycle Time
4.0
4.4
5.0
6.0
ns
tKH
Clock HIGH Time
1.6
1.7
2.0
2.4
ns
tKL
Clock LOW Time
1.6
1.7
2.0
2.4
ns
Output Times
tKQ
Clock to Output Valid
2.4
2.5
3.0
3.5
ns
tKQX
Clock to Output Invalid
1.25
ns
tKQLZ
Clock to Output in Low-Z[12, 17, 23]
0
000
ns
tKQHZ
Clock to Output in High-Z[12, 17, 23]
1.25
3.0
1.25
3.0
1.25
3.0
1.25
4.0
ns
tOEQ
OE to Output Valid[24]
2.5
3.5
ns
tOELZ
OE to Output in Low-Z[12, 17, 23]
0
000
ns
tOEHZ
OE to Output in High-Z[12, 17, 23]
2.5
3.5
ns
Set-up Times
tS
Address, Controls, and Data In[25]
1.5
ns
Hold Times
tH
Address, Controls, and Data In[25]
0.5
ns
Notes:
21. Overshoot: VIH(AC) < VDD + 1.5V for t < tTCYC/2; undershoot: VIL(AC) < 0.5V for t < tTCYC/2; power-up: VIH <
2.6V and VDD < 2.4V and VDDQ < 1.4V for t < 200 ms.
22. Test conditions as specified with the output loading as shown in part (a) of AC Test Loads unless otherwise noted.
23. At any given temperature and voltage condition, tKQHZ is less than tKQLZ and tOEHZ is less than tOELZ.
24. OE is a “Don’t Care” when a byte write enable is sampled LOW.
25. This is a synchronous device. All synchronous inputs must meet specified set-up and hold time, except for “don’t care”
as defined in the truth table.
317
/ 225
351
5pF
(a)
(b)
DQ
50
Z0 =50
V
t = 1.5Vfor 3.3V VCCQ
3.3V / 2.5V
ALL INPUT PULSES
3.3V / 2.5V
0V
90%
10%
90%
10%
≤ 1.5 ns
(c)
or VCCQ/2 for 2.5V VCCQ
DQ
/ 225
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1347DP | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1347F-100AC | 功能描述:IC SRAM 4.5MBIT 100MHZ 100LQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| CY7C1347F-133AC | 功能描述:IC SRAM 4.5MBIT 133MHZ 100LQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| CY7C1347F-133BGI | 制造商:Rochester Electronics LLC 功能描述:4M- 128KX36 3.3V PIPELINE 1CD STD. SPEED-SYNCHRONOUS SRAM - Bulk |
| CY7C1347F-166BGCT | 制造商:Cypress Semiconductor 功能描述: |
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