參數(shù)資料
型號(hào): CY7C1515AV18-250BZXI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: SRAM
英文描述: 2M X 36 QDR SRAM, 0.45 ns, PBGA165
封裝: 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
文件頁(yè)數(shù): 21/31頁(yè)
文件大小: 774K
代理商: CY7C1515AV18-250BZXI
CY7C1511AV18, CY7C1526AV18
CY7C1513AV18, CY7C1515AV18
Document Number: 001-06985 Rev. *D
Page 28 of 31
250
CY7C1511AV18-250BZC
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
Commercial
CY7C1526AV18-250BZC
CY7C1513AV18-250BZC
CY7C1515AV18-250BZC
CY7C1511AV18-250BZXC
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1526AV18-250BZXC
CY7C1513AV18-250BZXC
CY7C1515AV18-250BZXC
CY7C1511AV18-250BZI
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
Industrial
CY7C1526AV18-250BZI
CY7C1513AV18-250BZI
CY7C1515AV18-250BZI
CY7C1511AV18-250BZXI
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1526AV18-250BZXI
CY7C1513AV18-250BZXI
CY7C1515AV18-250BZXI
200
CY7C1511AV18-200BZC
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
Commercial
CY7C1526AV18-200BZC
CY7C1513AV18-200BZC
CY7C1515AV18-200BZC
CY7C1511AV18-200BZXC
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1526AV18-200BZXC
CY7C1513AV18-200BZXC
CY7C1515AV18-200BZXC
CY7C1511AV18-200BZI
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
Industrial
CY7C1526AV18-200BZI
CY7C1513AV18-200BZI
CY7C1515AV18-200BZI
CY7C1511AV18-200BZXI
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1526AV18-200BZXI
CY7C1513AV18-200BZXI
CY7C1515AV18-200BZXI
Ordering Information (continued)
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit www.cypress.com for actual products offered.
Speed
(MHz)
Ordering Code
Package
Diagram
Package Type
Operating
Range
相關(guān)PDF資料
PDF描述
CY7C1522JV18-250BZI 8M X 8 DDR SRAM, 0.45 ns, PBGA165
CY7C1524KV18-333BZI 2M X 36 DDR SRAM, 0.45 ns, PBGA165
CY7C1612KV18-333BZXC 8M X 18 QDR SRAM, PBGA165
CY7C256-45PC 32K X 8 OTPROM, 45 ns, PDIP28
CY7C2561KV18-450BZC 8M X 8 QDR SRAM, 0.37 ns, PBGA165
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1515JV18-167BZI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mx36 1.8V QDR Burst 4 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1515JV18-300BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2M x 36 1.8V QDR 靜態(tài)隨機(jī)存取存儲(chǔ)器 Four-Word Burst RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1515JV18-300BZI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mx36 1.8V QDR Burst 4 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1515JV18-300BZXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2M x 36 1.8V QDR 靜態(tài)隨機(jī)存取存儲(chǔ)器 Four-Word Burst RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1515JV18-333BZXC 制造商:Cypress Semiconductor 功能描述:IC SRAM 72MBIT 333MHZ 165-FPBGA - Trays