參數(shù)資料
型號： CY7C1515AV18-250BZXI
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： SRAM
英文描述： 2M X 36 QDR SRAM, 0.45 ns, PBGA165
封裝： 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
文件頁數(shù)： 4/31頁
文件大?。?/td> 774K
代理商： CY7C1515AV18-250BZXI
CY7C1511AV18, CY7C1526AV18
CY7C1513AV18, CY7C1515AV18
Document Number: 001-06985 Rev. *D
Page 12 of 31
Write Cycle Descriptions
The write cycle description table for CY7C1515AV18 follows. [2, 10]
BWS0
BWS1
BWS2
BWS3
K
Comments
LLLL
L–H
–
During the Data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
LLLL
–
L–H During the Data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
L
H
L–H
–
During the Data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
L
H
–
L–H During the Data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
H
L
H
L–H
–
During the Data portion of a write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] remains unaltered.
H
L
H
–
L–H During the Data portion of a write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] remains unaltered.
H
L
H
L–H
–
During the Data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
H
L
H
–
L–H During the Data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
H
L
L–H
–
During the Data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
H
L
–
L–H During the Data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
HHHH
L–H
–
No data is written into the device during this portion of a write operation.
HHHH
–
L–H No data is written into the device during this portion of a write operation.
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CY7C1515JV18-167BZI 功能描述:靜態(tài)隨機存取存儲器 2Mx36 1.8V QDR Burst 4 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1515JV18-300BZC 功能描述:靜態(tài)隨機存取存儲器 2M x 36 1.8V QDR 靜態(tài)隨機存取存儲器 Four-Word Burst RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1515JV18-300BZI 功能描述:靜態(tài)隨機存取存儲器 2Mx36 1.8V QDR Burst 4 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1515JV18-300BZXC 功能描述:靜態(tài)隨機存取存儲器 2M x 36 1.8V QDR 靜態(tài)隨機存取存儲器 Four-Word Burst RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1515JV18-333BZXC 制造商:Cypress Semiconductor 功能描述:IC SRAM 72MBIT 333MHZ 165-FPBGA - Trays
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