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參數(shù)資料
| 型號(hào)： | DSM2150F5V-12T6 |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | 數(shù)字信號(hào)處理 |
| 英文描述： | DSM (Digital Signal Processor System Memory) for Analog Devices DSPs (3.3V Supply) |
| 中文描述： | 帝斯曼（數(shù)字信號(hào)處理器系統(tǒng)內(nèi)存）的ADI公司的DSP（3.3V電源） |
| 文件頁(yè)數(shù)： | 55/73頁(yè) |
| 文件大?。?/td> | 1067K |
| 代理商： | DSM2150F5V-12T6 |
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DSM2150F5V
Table 21. DC Characteristics
Note: 1. Reset has hysteresis. V
IL1
is valid at or below 0.2V
CC
–
0.1. V
IH1
is valid at or above 0.8V
CC
.
2. CSI deselected (CSI >V
CC
–
0.3V) or the DSP is not changing state of any address signal.
3. PLD is in non-Turbo Mode, and none of the PLD inputs are switching.
4. No inputs floating, must be solid logic
’
1
’
or
’
0
’
(pull up to V
CC
or GND, or actively driven)
5. See
Figure 23., page 51
for the PLD current calculation.
6. I
OUT
= 0mA, meaning outputs are driving no loads.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
V
IH
High Level Input Voltage
3.0V < V
CC
< 3.6V
0.7V
CC
V
CC
+ 0.5
V
V
IL
Low Level Input Voltage
3.0V < V
CC
< 3.6V
–
0.5
0.8
V
V
IH1
Reset High Level Input Voltage
(Note
1)
0.8V
CC
V
CC
+ 0.5
V
V
IL1
Reset Low Level Input Voltage
(Note
1)
–
0.5
0.2V
CC
–
0.1
V
V
HYS
Reset Pin Hysteresis
0.3
V
V
LKO
V
CC
(min) for Flash Erase and
Program
1.5
2.2
V
V
OL
Output Low Voltage
I
OL
= 20μA, V
CC
= 3.0V
0.01
0.1
V
I
OL
= 4mA, V
CC
= 3.0V
0.15
0.45
V
V
OH
Output High Voltage
I
OH
=
–
20μA, V
CC
= 3.0V
2.9
2.99
V
I
OH
=
–
1mA, V
CC
= 3.0V
2.7
2.8
V
I
STBY
Stand-by Supply Current
CSI >V
CC
–
0.3V (Note
2,3,4)
50
100
μA
I
LI
Input Leakage Current
V
SS
< V
IN
< V
CC
–
1
±.1
1
μA
I
LO
Output Leakage Current
0.45 < V
IN
< V
CC
–
10
±5
10
μA
I
CC
(DC)
(Note
6)
Operating
Supply
Current
PLD Only
PLD_TURBO = Off,
f = 0MHz (Note
3)
0
μA/
PT
PLD_TURBO = On,
f = 0MHz
200
400
μA/
PT
Flash memory
During Flash memory
WRITE/Erase Only
10
25
mA
Read only, f = 0MHz
0
0
mA
I
CC
(AC)
PLD AC Adder
(see Note 5)
Flash memory AC Adder
1.5
2.0
mA/
MHz
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