參數(shù)資料
型號(hào)： EDD51321CBH
廠商： Elpida Memory, Inc.
英文描述： 512M bits DDR SDRAM
中文描述： 512M比特DDR內(nèi)存
文件頁(yè)數(shù)： 13/55頁(yè)
文件大?。?/td> 589K
代理商： EDD51321CBH
EDD51321CBH
Preliminary Data Sheet E1094E30 (Ver. 3.0)
13
Command Operation
Command Truth Table
The DDR SDRAM recognizes the following commands specified by the /CS, /RAS, /CAS, /WE and address pins.
CKE
Command
Symbol
n – 1 n
/CS
/RAS /CAS /WE BA1 BA0 AP
Address
Ignore command
DESL
H
H
H
×
×
×
×
×
×
×
No operation
NOP
H
H
L
H
H
H
×
×
×
×
Burst stop command
BST
H
H
L
H
H
L
×
×
×
×
Column address and read command
READ
H
H
L
H
L
H
V
V
L
V
Read with auto precharge
READA
H
H
L
H
L
H
V
V
H
V
Column address and write command
WRIT
H
H
L
H
L
L
V
V
L
V
Write with auto precharge
WRITA
H
H
L
H
L
L
V
V
H
V
Row address strobe and bank active
ACT
H
H
L
L
H
H
V
V
V
V
Precharge select bank
PRE
H
H
L
L
H
L
V
V
L
×
Precharge all bank
PALL
H
H
L
L
H
L
×
×
H
×
Refresh
REF
H
H
L
L
L
H
×
×
×
×
SELF
H
L
L
L
L
H
×
×
×
×
Mode register set
MRS
H
H
L
L
L
L
L
L
L
V
Remark: H: VIH. L: VIL.
×
: Don’t care V: Valid address input
Note: The CKE level must be kept for 1 CK cycle at least.
Ignore command [DESL]
When /CS is high at the cross point of the CK rising edge and the VDDQ/2 level, all input signals are neglected and
internal state is held.
No operation [NOP]
As long as this command is input at the cross point of the CK rising edge and the VDDQ/2 level, address and data
input are neglected and internal state is held.
Burst stop command [BST]
This command stops a current burst operation.
Column address strobe and read command [READ]
This command starts a read operation. The start address of the burst read is determined by the column address
(See “Address Pins Table” in Pin Function) and the bank select address. After the completion of the read operation,
all output buffers become high-Z.
Read with auto precharge [READA]
This command starts a read operation. After completion of the read operation, precharge is automatically executed.
Column address strobe and write command [WRIT]
This command starts a write operation. The start address of the burst write is determined by the column address
(See “Address Pins Table” in Pin Function) and the bank select address.
Write with auto precharge [WRITA]
This command starts a write operation. After completion of the write operation, precharge is automatically executed.
EMRS
H
H
L
L
L
L
H
L
L
V
相關(guān)PDF資料
PDF描述
EDD51321CBH-6CTT-E 512M bits DDR SDRAM
EDD51321CBH-7ETT-E 512M bits DDR SDRAM
EDE1116ABSE-6E-E 1G bits DDR2 SDRAM
EDE1104ABSE 1G bits DDR2 SDRAM
EDE1104ABSE-4A-E 1G bits DDR2 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDD51321CBH-6CTT-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR SDRAM
EDD51321CBH-7ETT-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR SDRAM
EDD51321DBH-5BTS-F 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR Mobile RAM? WTR (Wide Temperature Range)
EDD51321DBH-6ETS-F 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR Mobile RAM? WTR (Wide Temperature Range)
EDD51321DBH-TS 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR Mobile RAM? WTR (Wide Temperature Range)
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*