參數(shù)資料
型號: EDD51321CBH
廠商: Elpida Memory, Inc.
英文描述: 512M bits DDR SDRAM
中文描述: 512M比特DDR內(nèi)存
文件頁數(shù): 33/55頁
文件大?。?/td> 589K
代理商: EDD51321CBH
EDD51321CBH
Preliminary Data Sheet E1094E30 (Ver. 3.0)
33
A Write command to the consecutive Read command interval: To complete the burst operation
Destination row of the consecutive read
command
Bank
address
To complete the burst operation, the consecutive read command should be
performed tWRD after the write command.
Precharge the bank tWPD after the preceding write command. tRP after the
precharge command, issue the ACT command. tRCD after the ACT command, the
consecutive read command can be issued. See ‘A read command to the
consecutive precharge interval’ section.
To complete a burst operation, the consecutive read command should be
performed tWRD after the write command.
Precharge the bank independently of the preceding write operation. tRP after the
precharge command, issue the ACT command. tRCD after the ACT command, the
consecutive read command can be issued.
Row address State
Operation
1. Same
Same
ACTIVE
2. Same
Different
3. Different
Any
ACTIVE
IDLE
in0
in1
in2
in3
out2
out0
out1
CK
/CK
DM
DQ
Command
t1
t0
t2
t3
tn
tn + 1
tn + 2
tn + 3
tn + 4
BL = 4
CL = 3
tWRD (min)
DQS
INPUT
OUTPUT
WRIT
NOP
NOP
READ
tWTR*
Note: tWTR is referenced from the first positive CK edge after the last desired data in pair tWTR.
WRITE to READ Command Interval
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EDD51321CBH-6CTT-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR SDRAM
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EDD51321DBH-6ETS-F 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR Mobile RAM? WTR (Wide Temperature Range)
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