參數(shù)資料
型號(hào)： EDD51321CBH
廠商： Elpida Memory, Inc.
英文描述： 512M bits DDR SDRAM
中文描述： 512M比特DDR內(nèi)存
文件頁(yè)數(shù)： 5/55頁(yè)
文件大?。?/td> 589K
代理商： EDD51321CBH
EDD51321CBH
Preliminary Data Sheet E1094E30 (Ver. 3.0)
5
DC Characteristics 1 (TA = –20
°
C to +85
°
C, VDD and VDDQ = 1.8V +0.15V/–0.1V, VSS and VSSQ = 0V)
×
32
Parameter
Symbol
Grade
max.
Unit
Test condition
Notes
Operating current
IDD1
-6C
-7E
90
80
mA
Burst length = 2
tRC
≥
tRC (min.), IO = 0mA,
One bank active
CKE
≤
VIL (max.),
tCK = tCK (min.)
1
Standby current in power-down
IDD2P
3.0
mA
Standby current in power-down
(input signal stable)
IDD2PS
2.8
mA
CKE
≤
VIL (max.), tCK =
∞
Standby current in non power-down
IDD2N
6.0
mA
CKE
≥
VIH (min.),
tCK = tCK (min.),
/CS
≥
VIH (min.),
Input signals are changed one time
during 2tCK.
CKE
≥
VIH (min.), tCK =
∞
,
Input signals are stable.
CKE
≤
VIL (max.),
tCK = tCK (min.)
Standby current in non power-down
(input signal stable)
IDD2NS
4.0
mA
Active standby current in power-down IDD3P
5.0
mA
Active standby current in power-down
(input signal stable)
IDD3PS
4.0
mA
CKE
≤
VIL (max.), tCK =
∞
Active standby current in non power-
down
IDD3N
10
mA
CKE
≥
VIH (min.),
tCK = tCK (min.),
/CS
≥
VIH (min.),
Input signals are changed one time
during 2 tCK.
Active standby current in non power-
down
(input signal stable)
IDD3NS
7.0
mA
CKE
≥
VIH (min.), tCK =
∞
,
Input signals are stable.
Burst operating current
IDD4
-6C
-7E
150
120
mA
Burst length = 4
tCK
≥
tCK (min.),
IOUT = 0mA, All banks active
tRFC
≥
tRFC (min.)
2
Refresh current
IDD5
90
mA
3
Self-refresh current
IDD6
3.5
mA
CKE
≤
0.2V
Notes: 1. IDD1 depends on output loading and cycle rates. Specified values are obtained with the output open.
In addition to this, IDD1 is measured on condition that addresses are changed only one time during
tCK (min.).
2. IDD4 depends on output loading and cycle rates. Specified values are obtained with the output open.
In addition to this, IDD4 is measured on condition that addresses are changed only one time during
tCK (min.).
3. IDD5 is measured on condition that addresses are changed only one time during tCK (min.).
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EDD51321CBH-6CTT-E 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:512M bits DDR SDRAM
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