參數(shù)資料
型號： HY5PS12423LF
英文描述： 128Mx4|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M
中文描述： 128Mx4 | 1.8 | 8K的| D43/D44/D54/D55 |的DDR II內(nèi)存- 512M
文件頁數(shù)： 38/66頁
文件大小： 862K
代理商： HY5PS12423LF
Rev. 0.52/Nov. 02 38
HY5PS12423(L)F
HY5PS12823(L)F
HY5PS121623(L)F
ODT Control of Writes
At a minimum, ODT must be latched High by CK at (Read Latency - 3tCK) after the WR Command and remain High
until (Write Latency + BL/2 - 2tCK) after the WR command (where Write Latency = Read Latency - 1tCK). During
writes, no ODT is required at the controller.
CK
CK
T0
T1
T2
T3
T4
T5
T6
ODT
Controller
Term Res.
CMD
(to slot1)
WR
WR
at DRAM in slot1
CMD
Data In
Read Latency-1
DQs
DQS
DQS
ODT
Controller
Term Res.
Rtt(DRAM)
tAOND
tAOFD
at DRAM in slot2
Write Example for a 2 slot registered system with 2nd slot in Active Mode
(Read Latency = 3tCK; tAOND = 2tCK; tAOFD = 2.5tCK)
相關(guān)PDF資料
PDF描述
HY5PS12823F 64Mx8|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M
HY5PS12823LF 64Mx8|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M
HY5P Current Transducers HY 5 to 25-P/SP1
HY5R256HC -|2.5V|8K|40|Direct RDRAM - 256M
HY5R288HC -|2.5V|8K|40|Direct RDRAM - 288M
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY5PS12821AF 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR2 SDRAM
HY5PS12821AF-C3 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR2 SDRAM
HY5PS12821AF-C4 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR2 SDRAM
HY5PS12821AF-E3 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR2 SDRAM
HY5PS12821AFP 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR2 SDRAM
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