參數(shù)資料
型號: HY5PS12423LF
英文描述: 128Mx4|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M
中文描述: 128Mx4 | 1.8 | 8K的| D43/D44/D54/D55 |的DDR II內(nèi)存- 512M
文件頁數(shù): 53/66頁
文件大小: 862K
代理商: HY5PS12423LF
Rev. 0.52/Nov. 02 53
HY5PS12423(L)F
HY5PS12823(L)F
HY5PS121623(L)F
Power Down
When CKE goes low DDR-II DRAM entered power down mode. If power down command is issued during all bank idle
state, DRAM enter precharge power down mode. If power down command is issued when any particular row is active
states, DRAM enter active power down mode. Power down command is prohibited during any read or write burst
accesses. During power down mode, all input and output buffer is turned off except CK, CK and CKE, which means all
input signals are Don’t care. Power down mode is maintained by keep CKE low. Power-down duration is limited by the
refresh requirements of the device. Power down state is synchronously exited when CKE assert high. A valid, execut-
able command may be applied two clock cycles later.
/CK
CK
CKE
tIS
tIS
NOP
CMD
Valid
NOP
Valid
No column access
in progress
Enter power down mode
Exit power down mode
相關(guān)PDF資料
PDF描述
HY5PS12823F 64Mx8|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M
HY5PS12823LF 64Mx8|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M
HY5P Current Transducers HY 5 to 25-P/SP1
HY5R256HC -|2.5V|8K|40|Direct RDRAM - 256M
HY5R288HC -|2.5V|8K|40|Direct RDRAM - 288M
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