參數(shù)資料
型號： HYB39S256800
廠商： SIEMENS AG
英文描述： 256 MBit Synchronous DRAM(256M位同步動態(tài)RAM)
中文描述： 256兆比特同步DRAM（256M位同步動態(tài)RAM）的
文件頁數(shù)： 14/46頁
文件大?。?/td> 594K
代理商： HYB39S256800
INFINEON Technologies
14
HYB39S256400/800/160T
256MBit Synchronous DRAM
Absolute Maximum Ratings
Operating temperature range .........................................................................................0 to + 70
°
C
Storage temperature range......................................................................................
– 55 to + 150
°
C
Input/output voltage.............................................................................................– 0.3 to Vcc+0.3 V
Power supply voltage VDD / VDDQ..........................................................................– 0.3 to + 4.6 V
Power Dissipation............................................. ..........................................................................1 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under
“
Absolute Maximum Ratings
”
may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
Recommended Operation and Characteristics:
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD,
V
DDQ
= 3.3 V
±
0.3 V
Notes:
1. All voltages are referenced to VSS.
2. Vih may overshoot to Vcc + 2.0 V for pulse width of < 4ns with 3.3V. Vil may undershoot to
-2.0 V for pulse width < 4.0 ns with 3.3V. Pulse width measured at 50% points with amplitude measured peak
to DC reference.
Capacitance
T
A
= 0 to 70
°
C;
V
DD
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
Limit Values
Unit Notes
min.
max.
Input high voltage
V
I
H
V
I
L
V
OH
V
OL
I
I
(L)
2.0
Vcc+0.3
V
1, 2
Input low voltage
Output high voltage (
I
OUT
= – 4.0 mA)
Output low voltage (
I
OUT
= 4.0 mA)
Input leakage current, any input
(0 V <
V
I
N
< Vddq, all other inputs = 0 V)
Output leakage current
(DQ is disabled, 0 V <
V
OUT
<
V
CC
)
– 0.3
0.8
V
1, 2
2.4
–
V
3
–
0.4
V
μ
A
3
– 5
5
I
O(L)
– 5
5
μ
A
Parameter
Symbol
Values
Unit
min.
max.
Input capacitance
(CLK)
C
I
1
C
I
2
2.5
4.0
pF
Input capacitance
(A0-A12, BA0,BA1,RAS, CAS, WE, CS, CKE, DQM)
2.5
5.0
pF
Input / Output capacitance
(DQ)
C
I
O
4.0
6.5
pF
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參數(shù)描述
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