參數(shù)資料
型號: HYB39S256800
廠商: SIEMENS AG
英文描述: 256 MBit Synchronous DRAM(256M位同步動態(tài)RAM)
中文描述: 256兆比特同步DRAM(256M位同步動態(tài)RAM)的
文件頁數(shù): 15/46頁
文件大小: 594K
代理商: HYB39S256800
INFINEON Technologies
15
HYB39S256400/800/160T
256MBit Synchronous DRAM
Operating Currents
(T
A
= 0 to 70
o
C, Vdd = 3.3V
±
0.3V
(Recommended Operating Conditions unless otherwise noted)
Notes:
3. These parameters depend on the cycle rate. These values are measured at 125 MHz for -8 & -8A
and at 100 MHz for -10 parts. Input signals are changed once during tck, excepts for ICC6 and for standby
currents when tck=infinity.
4. These parameters are measured with continuous data stream during read access and all DQ toggling. CL=3
and BL=4 is assumed and the VDDQ current is excluded.
Parameter & Test Condition
Symb.
-8/-8A
-8B
Note
max.
OPERATING CURRENT
trc=trcmin., tck=tckmin.
Ouputs open, Burst Length = 4, CL=3
All banks operated in random access,
all banks operated in ping-pong manner
to maximize gapless data access
ICC1
x4
x8
x16
210
210
210
165
165
165
mA
mA
mA
3
PRECHARGE STANDBY CURRENT in
Power Down Mode
CS =VIH (min.), CKE<=Vil(max)
tck = min.
ICC2P
2
2
mA
3
PRECHARGE STANDBY CURRENT in
Non-Power Down Mode
CS = VIH (min.), CKE>=Vih(min)
tck = min.
ICC2N
19
16
mA
3
NO OPERATING CURRENT
tck = min., CS = VIH(min),
active state ( max. 4 banks)
CKE>=VIH(min.)
ICC3N
45
40
mA
3
CKE<=VIL(max.)
ICC3P
10
10
mA
3
BURST OPERATING CURRENT
tck = min.,
Read command cycling
ICC4
x4
x8
x16
210
210
210
165
165
165
mA
mA
mA
3,4
AUTO REFRESH CURRENT
tck = min.,
Auto Refresh command cycling
ICC5
240
195
mA
3
SELF REFRESH CURRENT
Self Refresh Mode, CKE=0.2V
standard version
ICC6
2.5
2.5
mA
3
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