參數(shù)資料
型號: ISP1362
廠商: NXP Semiconductors N.V.
英文描述: Single-chip Universal Serial Bus On-The-Go controller
中文描述: 單芯片通用串行總線和On - The - Go控制器
文件頁數(shù): 132/150頁
文件大?。?/td> 647K
代理商: ISP1362
Philips Semiconductors
ISP1362
Single-chip USB OTG controller
Product data
Rev. 03
06 January 2004
132 of 150
9397 750 12337
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
I
CC(cp)(susp)
suspend supply current for
charge pump
GlobalPowerDown bit of the
HcHardwareCon
fi
guration
register is logic 0
GlobalPowerDown bit of the
HcHardwareCon
fi
guration
register is logic 1
ATX is idle
I
LOAD
= 8 mA
I
LOAD
= 0 mA
-
-
45
μ
A
-
-
15
μ
A
I
CC(cp)
operating supply current in
charge pump mode
-
-
4.4
0.2
-
0.8
-
2
-
-
-
-
-
-
150
-
200
-
200
75
20
300
-
0.8
-
2
-
4
-
-
mA
μ
A
V
V
mV
V
mV
V
mV
%
V
th(VBUS_VLD)
V
th(SESS_END)
V
hys(SESS_END)
V
th(ASESS_VLD)
V
hys(ASESS_VLD)
V
th(BSESS_VLD)
V
hys(BSESS_VLD)
E
V
BUS
valid threshold
V
BUS
session end threshold
V
BUS
session end hysteresis
V
BUS
A valid threshold
V
BUS
A valid hysteresis
V
BUS
B valid threshold
V
BUS
B valid hysteresis
ef
fi
ciency when loaded
I
LOAD
= 8 mA; V
IN
= 3 V;
see
Figure 28
I
VBUS(leak)
R
VBUS(PU)
R
VBUS(PD)
R
VBUS(IDLE)
leakage current from V
BUS
V
BUS
pull-up resistance
V
BUS
pull-down resistance
V
BUS
idle impedance for the
A-device
V
BUS
active pull-down
impedance
-
281
656
40
15
-
-
-
-
-
-
100
μ
A
k
pull to V
CC
when enabled
pull to GND when enabled
when ID = LOW and
DRV_VBUS = 0
when ID = HIGH and
DRV_VBUS =1
R
VBUS(ACTIVE)
-
350
-
k
Table 147: Static characteristics: charge pump
continued
V
CC
= 3.0 V to 3.6 V; GND = 0 V; T
amb
=
40
°
C to
+
85
°
C; C
LOAD
= 2
μ
F
;
unless otherwise speci
fi
ed.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
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