- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄374354 > KM416S1120D (Electronic Theatre Controls, Inc.) 512K x 16bit x 2 Banks Synchronous DRAM LVTTL PDF資料下載
參數(shù)資料
| 型號(hào)： | KM416S1120D |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
| 中文描述： | 為512k × 16位× 2銀行同步DRAM LVTTL |
| 文件頁(yè)數(shù)： | 23/43頁(yè) |
| 文件大?。?/td> | 1131K |
| 代理商： | KM416S1120D |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)當(dāng)前第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)
KM416S1120D
CMOS SDRAM
- 23
Rev. 1.4 (Jun. 1999)
X
X
X
CA, A
10
/AP
RA
A
10
/AP
X
OP code
X
X
X
CA, A
10
/AP
CA, A
10
/AP
RA
A
10
/AP
X
X
X
X
CA, A
10
/AP
CA, A
10
/AP
RA
A
10
/AP
X
X
X
X
CA, A
10
/AP
CA, A
10
/AP
RA
A
10
/AP
X
X
X
X
CA, A
10
/AP
RA, RA
10
X
X
X
X
CA, A
10
/AP
RA, RA
10
X
X
X
X
CA
RA
A
10
/AP
FUNCTION TRUTH TABLE (TABLE 1)
Current
State
CS
RAS
CAS
WE
BA
ADDR
ACTION
Note
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
H
L
L
L
L
L
H
L
L
L
L
L
IDLE
Row
Active
Read
Write
Read with
Auto
Precharge
Write with
Auto
Precharge
Pre-
charging
NOP
NOP
ILLEGAL
ILLEGAL
Row (& Bank) Active ; Latch RA
NOP
Auto Refresh or Self Refresh
Mode Register Access
NOP
NOP
ILLEGAL
Begin Read ; latch CA ; determine AP
Begin Write ; latch CA ; determine AP
ILLEGAL
Precharge
ILLEGAL
NOP (Continue Burst to End --> Row Active)
NOP (Continue Burst to End --> Row Active)
Term burst --> Row active
Term burst, New Read, Determine AP
Term burst, New Write, Determine AP
ILLEGAL
Term burst, Precharge timing for Reads
ILLEGAL
NOP (Continue Burst to End --> Row Active)
NOP (Continue Burst to End --> Row Active)
Term burst --> Row active
Term burst, New read, Determine AP
Term burst, New Write, Determine AP
ILLEGAL
Term burst, precharge timing for Writes
ILLEGAL
NOP (Continue Burst to End --> Precharge)
NOP (Continue Burst to End --> Precharge)
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
NOP (Continue Burst to End --> Precharge)
NOP (Continue Burst to End --> Precharge)
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
NOP --> Idle after t
RP
NOP --> Idle after t
RP
ILLEGAL
ILLEGAL
ILLEGAL
NOP --> Idle after t
RP
L
X
X
X
BA
BA
BA
X
OP code
X
X
X
BA
BA
BA
BA
X
X
X
X
BA
BA
BA
BA
X
X
X
X
BA
BA
BA
BA
X
X
X
X
BA
BA
X
X
X
X
BA
BA
X
X
X
X
BA
BA
BA
X
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
X
H
H
H
H
L
L
L
X
H
H
H
H
L
L
L
X
H
H
H
L
L
X
H
H
H
L
L
X
H
H
H
L
L
X
H
H
L
H
H
L
L
X
H
H
L
L
H
H
L
X
H
H
L
L
H
H
L
X
H
H
L
L
H
H
L
X
H
H
L
H
L
X
H
H
L
H
L
X
H
H
L
H
H
X
H
L
X
H
L
H
L
X
H
L
H
L
H
L
X
X
H
L
H
L
H
L
X
X
H
L
H
L
H
L
X
X
H
L
X
X
X
X
H
L
X
X
X
X
H
L
X
H
L
2
2
4
5
5
2
2
3
2
3
3
2
3
2
2
2
2
2
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM416S16230A | 4M x 16Bit x 4 Banks Synchronous DRAM(4M x 16位 x4組同步動(dòng)態(tài)RAM) |
| KM416S4030C | 1M x 16Bit x 4 Banks Synchronous DRAM |
| KM416S4030CT-F10 | 1M x 16Bit x 4 Banks Synchronous DRAM |
| KM416S4030CT-F7 | 1M x 16Bit x 4 Banks Synchronous DRAM |
| KM416S4030CT-F8 | 1M x 16Bit x 4 Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416S1120DT-G/F10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
| KM416S1120DT-G/F6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
| KM416S1120DT-G/F7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
| KM416S1120DT-G/F8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
| KM416S1120DT-G/FC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。