參數(shù)資料
型號: KM416S1120D
廠商: Electronic Theatre Controls, Inc.
英文描述: 512K x 16bit x 2 Banks Synchronous DRAM LVTTL
中文描述: 為512k × 16位× 2銀行同步DRAM LVTTL
文件頁數(shù): 34/43頁
文件大?。?/td> 1131K
代理商: KM416S1120D
KM416S1120D
CMOS SDRAM
- 34
Rev. 1.4 (Jun. 1999)
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Read & Write Cycle with Auto Precharge I @Burst Length=4
HIGH
Row Active
(A-Bank)
: Don't care
*Note:
* When Read(Write) command with auto precharge is issued at A-Bank after A and B Bank activation.
- if Read(Write) command without auto precharge is issued at B-Bank before A Bank auto precharge starts, A Bank
auto precharge will start at B Bank read command input point .
- any command can not be issued at A Bank during tRP after A Bank auto precharge starts.
Row Active
(B-Bank)
Read with
Auto Pre
charge
(A-Bank)
Write with
Auto Precharge
(A-Bank)
Row Active
(A-Bank)
BA
A
10
/AP
CL=2
CL=3
DQ
ADDR
CAS
RAS
CS
CKE
CLOCK
WE
DQM
Qa0
Qa1
Qb0
Qb1
Qa0
Qa1
Qb0
Qb1
Ra
Rb
Ca
Ra
Rb
Ra
Cb
Qb2
Qb3
Read without Auto
precharge(B-Bank)
Auto Precharge
Start Point
(A-Bank)*
Precharge
(B-Bank)
Ca
Ra
Da0
Da1
Da0
Da1
Qb2
Qb3
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM416S1120DT-G/F10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-G/F6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-G/F7 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-G/F8 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-G/FC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL