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參數(shù)資料
| 型號： | KM416S1120D |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
| 中文描述： | 為512k × 16位× 2銀行同步DRAM LVTTL |
| 文件頁數(shù)： | 25/43頁 |
| 文件大?。?/td> | 1131K |
| 代理商： | KM416S1120D |
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KM416S1120D
CMOS SDRAM
- 25
Rev. 1.4 (Jun. 1999)
FUNCTION TRUTH TABLE (TABLE 2)
Current
State
CS
RAS
CAS
WE
ADDR
ACTION
Note
X
H
L
L
L
L
X
X
H
L
L
L
L
X
X
H
L
L
L
L
L
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
RA
X
OP Code
X
X
X
X
X
Self
Refresh
INVALID
Exit Self Refresh --> Idle after t
RFC
(ABI)
Exit Self Refresh --> Idle after t
RFC
(ABI)
ILLEGAL
ILLEGAL
ILLEGAL
NOP (Maintain Self Refresh)
INVALID
Exit Power Down --> ABI
Exit Power Down --> ABI
ILLEGAL
ILLEGAL
ILLEGAL
NOP (Maintain Low Power Mode)
Refer to Table 1
Enter Power Down
Enter Power Down
ILLEGAL
ILLEGAL
Row (& Bank) Active
Enter Self Refresh
Mode Register Access
NOP
Refer to Operations in Table 1
Begin Clock Suspend next cycle
Exit Clock Suspend next cycle
Maintain Clcok Suspend
X
X
H
H
H
L
X
X
X
H
H
H
L
X
X
X
H
H
H
L
L
L
X
X
X
X
X
X
X
H
H
L
X
X
X
X
H
H
L
X
X
X
X
H
H
L
H
L
L
X
X
X
X
X
X
X
H
L
X
X
X
X
X
H
L
X
X
X
X
X
H
L
X
H
H
L
X
X
X
X
X
6
6
7
7
8
8
8
9
9
All
Banks
Idle
*Note :
6. CKE low to high transition is asynchronous.
7. CKE low to high transition is asynchronous if restarts internal clock.
A minimum setup time 1CLK + t
SS
must be satisfied before any command other than exit.
8. Power down and self refresh can be entered only from the both banks idle state.
9. Must be a legal command.
Abbreviations : ABI = All Banks Idle, RA = Row Address
CKE
(n-1)
H
L
L
L
L
L
L
H
L
L
L
L
L
L
H
H
H
H
H
H
H
H
L
H
H
L
L
X
H
H
H
H
H
L
X
H
H
H
H
H
L
H
L
L
L
L
L
L
L
L
H
L
H
L
CKE
n
All
Banks
Precharge
Power
Down
Any State
other than
Listed
above
相關(guān)PDF資料 |
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|---|---|
| KM416S16230A | 4M x 16Bit x 4 Banks Synchronous DRAM(4M x 16位 x4組同步動(dòng)態(tài)RAM) |
| KM416S4030C | 1M x 16Bit x 4 Banks Synchronous DRAM |
| KM416S4030CT-F10 | 1M x 16Bit x 4 Banks Synchronous DRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416S1120DT-G/F10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
| KM416S1120DT-G/F6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
| KM416S1120DT-G/F7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
| KM416S1120DT-G/F8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
| KM416S1120DT-G/FC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
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