參數(shù)資料
型號: KM416S1120D
廠商: Electronic Theatre Controls, Inc.
英文描述: 512K x 16bit x 2 Banks Synchronous DRAM LVTTL
中文描述: 為512k × 16位× 2銀行同步DRAM LVTTL
文件頁數(shù): 37/43頁
文件大?。?/td> 1131K
代理商: KM416S1120D
KM416S1120D
CMOS SDRAM
- 37
Rev. 1.4 (Jun. 1999)
0
1
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Read Interrupted by Precharge Command & Read Burst Stop Cycle @Burst Length=Full page
HIGH
Row Active
(A-Bank)
: Don't care
*Note :
1. At full page mode, burst is wrap-around at the end of burst. So auto precharge is impossible.
2. About the valid DQs after burst stop, it is same as the case of RAS interrupt.
Both cases are illustrated above timing diagram. See the label 0. 1, 2 on them.
But at burst write, Burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of "Full page write burst stop cycle".
3. Burst stop is valid at every burst length.
*Note 2
Precharge
(A-Bank)
Burst Stop
Read
(A-Bank)
Read
(A-Bank)
1
2
1
2
BA
A
10
/AP
CL=2
CL=3
DQ
ADDR
CAS
RAS
CS
CKE
CLOCK
WE
DQM
QAa0 QAa1 QAa2 QAa3 QAa4
QAa0
QAa1 QAa2
QAa3 QAa4
QAb0 QAb1 QAb2 QAb3 QAb4 QAb5
QAb0
QAb1 QAb2
QAb3 QAb4 QAb5
RAa
CAa
CAb
RAa
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