參數(shù)資料
型號： KSZ8863MLL-EVAL
廠商： Micrel Inc
文件頁數(shù)： 83/106頁
文件大?。?/td> 0K
描述： BOARD EVALUATION FOR KSZ8863MLL
標準包裝： 1
主要目的： 接口，以太網(wǎng) PHY
嵌入式： 否
已用 IC / 零件： KSZ8863MLL
已供物品： 板
相關(guān)產(chǎn)品： 576-3751-ND - IC ETHERNET SWITCH 3PORT 48-LQFP
576-3577-ND - IC ETHERNET SW 3PORT 48-LQFP
其它名稱： 576-3867
PIC16C72 Series
1998 Microchip Technology Inc.
Preliminary
DS39016A-page 77
13.0
ELECTRICAL CHARACTERISTICS - PIC16C72 SERIES
Absolute Maximum Ratings
Parameter
PIC16C72
PIC16CR72
Ambient temperature under bias
-55 to +125C
Storage temperature
-65C to +150C
Voltage on any pin with respect to VSS (except VDD, MCLR, and RA4) -0.3V to (VDD + 0.3V)
-0.3V to (VDD + 0.3V)
Voltage on VDD with respect to VSS
-0.3 to +7.5V
TBD
Voltage on MCLR with respect to VSS (Note 1)
-0.3 to +14V
TBD
Voltage on RA4 with respect to Vss
-0.3 to +14V
TBD
Total power dissipation (Note 2)
1.0W
Maximum current out of VSS pin
300 mA
Maximum current into VDD pin
250 mA
Input clamp current, IIK (VI < 0 or VI > VDD)
± 20 mA
Output clamp current, IOK (VO < 0 or VO > VDD)
± 20 mA
Maximum output current sunk by any I/O pin
25 mA
Maximum output current sourced by any I/O pin
25 mA
Maximum current sunk by PORTA and PORTB (combined)
200 mA
Maximum current sourced by PORTA and PORTB (combined)
200 mA
Maximum current sunk by PORTC
200 mA
Maximum current sourced by PORTC
200 mA
1.
Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up. Thus,
a series resistor of 50-100
should be used when applying a “l(fā)ow” level to the MCLR pin rather than pulling this
pin directly to VSS.
2.
Power dissipation is calculated as follows: Pdis = VDD x {IDD -
∑ IOH} + ∑ {(VDD - VOH) x IOH} + ∑(VOl x IOL).
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation list-
ings of this specication is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
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