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參數(shù)資料
| 型號(hào)： | LH28F040SUTD-Z4 |
| 廠商： | Sharp Corporation |
| 英文描述： | 4M (512K 】 8) Flash Memory |
| 中文描述： | 4分（為512k】8）閃存 |
| 文件頁(yè)數(shù)： | 22/32頁(yè) |
| 文件大?。?/td> | 247K |
| 代理商： | LH28F040SUTD-Z4 |
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LH28F040SUTD-Z4
4M (512K × 8) Flash Memory
22
DC Characteristics (Continued)
V
CC
= 3.3 V ± 0.3 V, T
A
= -20°C to +70°C
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
CC
= 3.3 V, V
PP
= 5.0 V, T = 25°C.
2. I
CCES
is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of
I
CCES
and I
CCR
.
3. Automatic Power Saving (APS) reduces I
CCR
to less than 2 mA in Static operation.
4. CMOS inputs are either V
CC
± 0.2 V or GND ± 0.2 V. TTL Inputs are either V
IL
or V
IH
.
5. These are the values of the current which is consumed within one bank area. The value for the bank0 and bank1 should be added in
order to calculate the value for the whole chip. If the bank0 is in write state and bank1 is in read state, the I
CC
= I
CCW
+ I
CCR
. If both
banks are in standby mode, the value for the device is 2 times the value in the above table.
SYMBOL
PARAMETER
TYPE
MIN.
MAX.
UNITS
TEST CONDITIONS
NOTE
I
PPR
V
PP
Read Current
65
200
μA
V
PP
> V
CC
1, 5
I
PPW
V
PP
Write Current
15
35
mA
V
PP
= V
PPH
, Byte/Two-Byte
Serial Write in Progress
1, 5
I
PPE
V
PP
Erase Current
20
40
mA
V
PP
= V
PPH
,
Block Erase in Progress
1, 5
I
PPES
V
PP
Erase Suspend
Current
65
200
μA
V
PP
= V
PPH
,
Block Erase Suspended
1, 5
V
IL
Input Low Voltage
-0.3
0.8
V
V
IH
Input High Voltage
2.0
V
CC
+ 0.3
V
V
OL
Output Low Voltage
0.4
V
V
CC
= V
CC
MIN. and
I
OL
= 4 mA
V
OH1
Output High Voltage
2.4
V
I
OH
= -2 mA
V
CC
= V
CC
MIN.
V
OH2
V
CC
- 0.2
V
I
OH
= 100 μA
V
CC
= V
CC
MIN.
V
PPL
V
PP
during Normal
Operations
0.0
5.5
V
V
PPH
V
PP
during Write/Erase
Operations
5.0
4.5
5.5
V
V
LKO
V
CC
Erase/Write
Lock Voltage
1.4
V
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