參數(shù)資料
型號(hào): M12S128168A
廠商: Elite Semiconductor Memory Technology Inc.
英文描述: 2M x 16 Bit x 4 Banks Synchronous DRAM
中文描述: 200萬× 16位× 4個(gè)銀行同步DRAM
文件頁數(shù): 16/44頁
文件大?。?/td> 967K
代理商: M12S128168A
ES MT
M12S128168A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.0
Publication Date
:
Nov. 2006
16/44
Self refresh entry command
(CS ,RAS ,CAS , CKE = Low ,
WE
= High)
After the command execution, self refresh operation continues while CKE
remains low. When CKE goes to high, the M12L128168A exits the self refresh mode.
During self refresh mode, refresh interval and refresh operation are performed
internally, so there is no need for external control.
Before executing self refresh, all banks must be precharged.
Burst stop command
(CS ,
WE
= Low,RAS ,CAS = High)
This command terminates the current burst operation.
Burst stop is valid at every burst length.
No operation
(CS = Low ,RAS ,CAS ,
WE
= High)
This command is not a execution command. No operations begin or terminate by
this command.
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12S128168A_08 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M12S128168A-10BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M12S128168A-10TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M12S128168A-6BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M12S128168A-6TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM