- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377801 > M12S128168A (Elite Semiconductor Memory Technology Inc.) 2M x 16 Bit x 4 Banks Synchronous DRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | M12S128168A |
| 廠商： | Elite Semiconductor Memory Technology Inc. |
| 英文描述： | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| 中文描述： | 200萬(wàn)× 16位× 4個(gè)銀行同步DRAM |
| 文件頁(yè)數(shù)： | 4/44頁(yè) |
| 文件大?。?/td> | 967K |
| 代理商： | M12S128168A |
第1頁(yè)第2頁(yè)第3頁(yè)當(dāng)前第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)
ES MT
M12S128168A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.0
Publication Date
:
Nov. 2006
4/44
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to V
SS
V
IN
, V
OUT
-1.0 ~ 3.6
V
Voltage on V
DD
supply relative to V
SS
V
DD
, V
DDQ
-1.0 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
C
°
Power dissipation
PD
1
W
Short circuit current
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITION
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0 to 70 C
I
OS
50
mA
)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
, V
DDQ
2.3
2.5
2.7
V
Input logic high voltage
V
IH
0.8xV
DDQ
-
V
DDQ
+0.3
V
1
Input logic low voltage
V
IL
-0.3
0
0.3
V
2
Output logic high voltage
V
OH
V
DDQ
-0.2
-
-
V
I
OH
= -0.1mA
Output logic low voltage
V
OL
-
-
0.2
V
μ
A
I
OL
= 0.1mA
Input leakage current
I
IL
-5
-
5
3
Output leakage current
I
OL
-5
-
5
μ
A
4
Note:
1. V
IH
(max) = 4.6V AC for pulse width
≤
10ns acceptable.
2. V
IL(min)
= -1.5V AC for pulse width
≤
10ns acceptable.
3. Any input 0V
≤
V
IN
≤
V
DD
+ 0.3V, all other pins are not under test = 0V.
4. Dout is disabled , 0V
≤
VOUT
≤
V
DD.
CAPACITANCE
(V
DD
= 2.5V, T
A
= 25
C
°
, f = 1MHZ)
Parameter
Symbol
Min
Max
Unit
Input capacitance (A0 ~ A11, BA0 ~ BA1)
C
IN1
2.5
4
pF
Input capacitance
(CLK, CKE, CS , RAS , CAS ,
WE
& L(U)DQM)
C
IN2
2.5
4
pF
Data input/output capacitance (DQ0 ~ DQ15)
C
OUT
2
6.5
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M12S128168A-10TG | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12S16161A-7BG | 512K x 16Bit x 2Banks Synchronous DRAM |
| M12S16161A-7TG | 512K x 16Bit x 2Banks Synchronous DRAM |
| M12S64322A | 512K x 32 Bit x 4 Banks Synchronous DRAM |
| M12S64322A-6BG | 512K x 32 Bit x 4 Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M12S128168A_08 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12S128168A-10BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12S128168A-10TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12S128168A-6BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12S128168A-6TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。