參數(shù)資料
型號: M12S128168A
廠商: Elite Semiconductor Memory Technology Inc.
英文描述: 2M x 16 Bit x 4 Banks Synchronous DRAM
中文描述: 200萬× 16位× 4個銀行同步DRAM
文件頁數(shù): 18/44頁
文件大?。?/td> 967K
代理商: M12S128168A
ES MT
M12S128168A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.0
Publication Date
:
Nov. 2006
18/44
3.
CAS Interrupt (I)
CLK
CMD
ADD
DQ (CL2)
DQ( CL3)
RD
QB0
QB2
QA0
CLK
CMD
ADD
DQ
WR
DA0
DB0
DB1
RD
A
B
QB1
QB3
QB0
QB2
QA0
QB3
QB1
t
C CD
* N ot e 2
WR
t
CC D * No t e 2
A
B
t
C D L
* No t e 3
W R
RD
t
C CD * N ot e 2
A
B
DA0
DB0
DB1
t
C D L
* No t e 3
DA0
DB0
DB1
DQ( CL3)
DQ (CL2)
1)R ea d i nt er ru pt ed by R ead (B L =4)
2) Wr i t e i n t er ru pt e d b y W ri t e (B L= 2)
3 )W ri t e in t er rup t ed by R ead (B L=2 )
* N ot e1
*Note : 1. By “interrupt” is meant to stop burst read/write by external before the end of burst.
By ” CAS interrupt ”, to stop burst read/write by CAS access ; read and write.
2. t
CCD
:CAS to CAS delay. (=1CLK)
3. t
CDL
: Last data in to new column address delay. (=1CLK)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12S128168A_08 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M12S128168A-10BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M12S128168A-10TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M12S128168A-6BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M12S128168A-6TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM