參數(shù)資料
型號(hào): M12S128168A
廠商: Elite Semiconductor Memory Technology Inc.
英文描述: 2M x 16 Bit x 4 Banks Synchronous DRAM
中文描述: 200萬(wàn)× 16位× 4個(gè)銀行同步DRAM
文件頁(yè)數(shù): 44/44頁(yè)
文件大?。?/td> 967K
代理商: M12S128168A
ES MT
M12S128168A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.0
Publication Date
:
Nov. 2006
44/44
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the products or specification in this document without notice.
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property rights of ESMT or others.
Any semiconductor devices may have inherently a certain rate of failure. To minimize risks
associated with customer's application, adequate design and operating safeguards against injury,
damage, or loss from such failure, should be provided by the customer when making application
designs.
ESMT's products are not authorized for use in critical applications such as, but not limited to, life
support devices or system, where failure or abnormal operation may directly affect human lives or
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applications.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12S128168A_08 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M12S128168A-10BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M12S128168A-10TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M12S128168A-6BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M12S128168A-6TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM