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參數(shù)資料
| 型號(hào)： | M12S128168A |
| 廠商： | Elite Semiconductor Memory Technology Inc. |
| 英文描述： | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| 中文描述： | 200萬(wàn)× 16位× 4個(gè)銀行同步DRAM |
| 文件頁(yè)數(shù)： | 27/44頁(yè) |
| 文件大?。?/td> | 967K |
| 代理商： | M12S128168A |
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ES MT
FUNCTION TRUTH TABLE (TABLE2)
M12S128168A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.0
Publication Date
:
Nov. 2006
27/44
Current
State
Self
Refresh
All
Banks
Precharge
Power
Down
All
Banks
Idle
Any State
other than
Listed
above
CKE
( n-1 )
H
L
L
L
L
L
L
H
L
L
L
L
L
L
H
H
H
H
H
H
H
H
H
L
H
H
L
L
CKE
n
X
H
H
H
H
H
L
X
H
H
H
H
H
L
H
L
L
L
L
L
L
L
L
L
H
L
H
L
CS RAS CAS WE
X
X
H
X
L
H
L
H
L
H
L
L
X
X
X
X
H
X
L
H
L
H
L
H
L
L
X
X
X
X
H
X
L
H
L
H
L
H
L
L
L
L
L
L
L
L
X
X
X
X
X
X
X
X
X
X
ADDR
ACTION
Note
X
X
H
H
L
X
X
X
X
H
H
L
X
X
X
X
H
H
L
H
H
L
L
X
X
X
X
X
X
X
H
L
X
X
X
X
X
H
L
X
X
X
X
X
H
L
X
H
H
L
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
RA
X
X
INVALID
Exit Self Refresh
Idle after tRFC (ABI)
Exit Self Refresh
Idle after tRFC (ABI)
ILLEGAL
ILLEGAL
ILLEGAL
NOP (Maintain Self Refresh)
INVALID
Exit Self Refresh
ABI
Exit Self Refresh
ABI
ILLEGAL
ILLEGAL
ILLEGAL
NOP (Maintain Low Power Mode)
Refer to Table1
Enter Power Down
Enter Power Down
ILLEGAL
ILLEGAL
Row (& Bank) Active
NOP
Enter Self Refresh
Mode Register Access
NOP
Refer to Operations in Table 1
Begin Clock Suspend next cycle
Exit Clock Suspend next cycle
Maintain Clock Suspend
6
6
7
7
8
8
8
9
9
OP Code
X
X
X
X
X
Abbreviations
:
ABI = All Banks Idle, RA = Row Address
*Note : 6.CKE low to high transition is asynchronous.
7.CKE low to high transition is asynchronous if restart internal clock.
A minimum setup time 1CLK + t
SS
must be satisfy before any command other than exit.
8.Power down and self refresh can be entered only from the all banks idle state.
9.Must be a legal command.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M12S128168A-10TG | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12S16161A-7BG | 512K x 16Bit x 2Banks Synchronous DRAM |
| M12S16161A-7TG | 512K x 16Bit x 2Banks Synchronous DRAM |
| M12S64322A | 512K x 32 Bit x 4 Banks Synchronous DRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M12S128168A_08 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12S128168A-10BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12S128168A-10TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12S128168A-6BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12S128168A-6TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
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