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參數(shù)資料
| 型號： | M2S56D30AKT-75 |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 32M X 8 DDR DRAM, 0.75 ns, PDSO64 |
| 封裝： | 0.40 MM PITCH, STSOP-64 |
| 文件頁數(shù)： | 22/41頁 |
| 文件大?。?/td> | 638K |
| 代理商： | M2S56D30AKT-75 |
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29
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
256M Double Data Rate Synchronous DRAM
M2S56D20/ 30/ 40AKT
After tRCD time from the bank activation, a WRITE command can be issued. 1st input data is sampled at the
WRITE command with data strobe input, followed by (BL-1) data being written into RAM.The Burst Length is BL.
The start address is specified by A11,A9-A0(x4)/A9-A0(x8)/A8-A0(x16), and the address sequence of burst data
is defined by the Burst Type. A WRITE command may be applied to any active bank, so the row precharge time
(tRP) can be hidden during the continuous input data by interleaving the multiple banks. The write recovery time
(tWR) is required from the last written data to the next PRE command. When A10 is high in a WRITE command,
the auto-precharge(WRITEA) is performed. Any command (READ,WRITE,PRE,ACT) asserted to the same
bank is inhibited till the internal precharge operation is completed. The next ACT command can be issued after
tDAL from the last input data cycle.
WRITE
Multi Bank Interleaving WRITE (BL=8)
Command
A0-9,11
A10
BA0,1
DQ
ACT
00
WRITE
00
WRITE
0
10
ACT
Xb
10
0
10
tRCD
D
tRCD
D
PRE
Xa
0
00
PRE
DQS
/CLK
CLK
Da0 Da1 Da2 Da3 Da4 Da5
Da6 Da7 Db0 Db1 Db2 Db3 Db4
Db5 Db6 Db7
Xa
Ya
Yb
Xb
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PDF描述 |
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| M30-6000206 | 2 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT |
| M30-6000406 | 4 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M2S56D30AKT-75A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2S56D30AKT-75AL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2S56D30AKT-75L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2S56D30ATP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2S56D30ATP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
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