參數(shù)資料
型號(hào): M58WR064KU70ZA6U
廠商: NUMONYX
元件分類: PROM
英文描述: 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
封裝: 7.50 X 5 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44
文件頁(yè)數(shù): 1/122頁(yè)
文件大小: 2187K
代理商: M58WR064KU70ZA6U
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July 2008
Rev 3
1
M58WR016KU M58WR016KL M58WR032KU
M58WR032KL M58WR064KU M58WR064KL
16-, 32- and 64-Mbit (x 16, mux I/O, multiple bank, burst)
1.8 V supply flash memories
Features
Supply voltage
–VDD = 1.7 V to 2 V for program, erase and
read
–VDDQ = 1.7 V to 2 V for I/O buffers
–VPP = 9 V for fast program
Multiplexed address/data
Synchronous/asynchronous read
– Synchronous burst read mode: 66 MHz
– Random access: 70 ns
Synchronous burst read suspend
Programming time
– 10 s by word typical for factory program
– Double/quadruple word program option
– Enhanced factory program options
Memory blocks
– Multiple bank memory array: 4-Mbit banks
– Parameter blocks (top or bottom location)
Dual operations
– Program erase in one bank while read in
others
– No delay between read and write
operations
Block locking
– All blocks locked at power up
– Any combination of blocks can be locked
–WP for block lock-down
Security
– 128-bit user programmable OTP cells
– 64-bit unique device number
Common flash interface (CFI)
100,000 program/erase cycles per block
Electronic signature
– Manufacturer code: 20h
– Top device code,
M58WR016KU: 8823h
M58WR032KU: 8828h
M58WR064KU: 88C0h
– Bottom device code,
M58WR016KL: 8824h
M58WR032KL: 8829h
M58WR064KL: 88C1h
ECOPACK packages available
VFBGA44 (ZA)
7.5 × 5 mm
FBGA
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