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參數(shù)資料
| 型號： | MT18VDDT12872PHIG-265XX |
| 元件分類： | DRAM |
| 英文描述： | 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA200 |
| 封裝： | SODIMM-200 |
| 文件頁數(shù)： | 17/39頁 |
| 文件大?。?/td> | 816K |
| 代理商： | MT18VDDT12872PHIG-265XX |
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128MB, 256MB, 512MB, 1GB (x72, ECC, PLL)
200-PIN DDR SDRAM SODIMM
09005aef808ffdc7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD9_18C16_32_64_128X72PHG_E.fm - Rev. E 7/03 EN
24
2003 Micron Technology, Inc. All rights reserved.
Notes
1. All voltages referenced to VSS.
2. Tests for AC timing, IDD, and electrical AC and DC
characteristics may be conducted at nominal ref-
erence/supply voltage levels, but the related spec-
ifications and device operation are guaranteed for
the full voltage range specified.
3. Outputs measured with equivalent load:
4. AC timing and IDD tests may use a VIL-to-VIH
swing of up to 1.5V in the test environment, but
input timing is still referenced to VREF (or to the
crossing point for CK/CK#), and parameter speci-
fications are guaranteed for the specified AC input
levels under normal use conditions. The mini-
mum slew rate for the input signals used to test
the device is 1V/ns in the range between VIL(AC)
and VIH(AC).
5. The AC and DC input level specifications are as
defined in the SSTL_2 Standard (i.e., the receiver
will effectively switch as a result of the signal
crossing the AC input level, and will remain in that
state as long as the signal does not ring back
above [below] the DC input LOW [HIGH] level).
6. VREF is expected to equal VDDQ/2 of the transmit-
ting device and to track variations in the DC level
of the same. Peak-to-peak noise (non-common
mode) on Vref may not exceed ±2 percent of the
DC value. Thus, from VDDQ/2, Vref is allowed
±25mV for DC error and an additional ±25mV for
AC noise. This measurement is to be taken at the
nearest VREF bypass capacitor.
7. VTT is not applied directly to the device. VTT is a
system supply for signal termination resistors, is
expected to be set equal to VREF and must track
variations in the DC level of VREF.
8. IDD is dependent on output loading and cycle
rates. Specified values are obtained with mini-
mum cycle time at CL = 2 for -26A and -202, CL =
2.5 for -335 and -265 with the outputs open.
9. Enables on-chip refresh and address counters.
10. IDD specifications are tested after the device is
properly initialized, and is averaged at the defined
cycle rate.
11. This parameter is sampled. VDD = +2.5V ±0.2V,
VDDQ = +2.5V ±0.2V, VREF = VSS, f = 100 MHz, TA =
25°C, VOUT(DC) = VDDQ/2, VOUT (peak to peak) =
0.2V. DM input is grouped with I/O pins, reflecting
the fact that they are matched in loading.
12. Command/Address input slew rate = 0.5V/ns. For
-262, -26A and -265 with slew rates 1V/ns and
faster, tIS and tIH are reduced to 900ps; For -335
with slew rates 1 V/ns and faster, tIS and tIH are
reduced to 750ps. If the slew rate is less than 0.5V/
ns, timing must be derated: tIS has an additional
50ps per each 100 mV/ns reduction in slew rate
from the 500 mV /ns, while tIH remains constant.
If the slew rate exceeds 4.5V/ns, functionality is
uncertain.
13. The CK/CK# input reference level (for timing ref-
erenced to CK/CK#) is the point at which CK and
CK# cross; the input reference level for signals
other than CK/CK# is VREF.
14. Inputs are not recognized as valid until VREF stabi-
lizes. Exception: during the period before VREF
stabilizes, CKE
0.3 x VDDQ is recognized as LOW.
15. The output timing reference level, as measured at
the timing reference point indicated in Note 3, is
VTT.
16. tHZ and tLZ transitions occur in the same access
time windows as data valid transitions. These
parameters are not referenced to a specific voltage
level, but specify when the device output is no
longer driving (HZ) or begins driving (LZ).
17. The intent of the Don’t Care state after completion
of the postamble is the DQS-driven signal should
either be high, low, or high-Z and that any signal
transition within the input switching region must
follow valid input requirements. That is, if DQS
transitions high [above VIHDC (MIN)] then it must
not transition low (below VIHDC) prior to tDQSH
(MIN).
18. This is not a device limit. The device will operate
with a negative value, but system performance
could be degraded due to bus turnaround.
19. It is recommended that DQS be valid (HIGH or
LOW) on or before the WRITE command. The
case shown (DQS going from High-Z to logic
LOW) applies when no WRITEs were previously in
progress on the bus. If a previous WRITE was in
progress, DQS could be HIGH during this time,
depending on tDQSS.
20. MIN (tRC or tRFC) for IDD measurements is the
smallest multiple of tCK that meets the minimum
absolute value for the respective parameter. tRAS
(MAX) for IDD measurements is the largest multi-
Output
(VOUT)
Reference
Point
50
VTT
30pF
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MT18VDDT12872PHY-335F1 | 制造商:Micron Technology Inc 功能描述:DRAM MOD DDR SDRAM 9GBIT 184UDIMM - Trays |
| MT18VDDT12872Y-265C2 | 制造商:Micron Technology Inc 功能描述:DRAM MOD DDR SDRAM 9GBIT 184RDIMM - Trays |
| MT18VDDT12872Y-265D2 | 功能描述:MODULE SDRAM DDR 1GB 184DIMM RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標準包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM |
| MT18VDDT25672G-265A2 | 功能描述:MODULE SDRAM DDR 2GB 184DIMM RoHS:否 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標準包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM |
| MT18VDDT25672G-335A2 | 制造商:Micron Technology Inc 功能描述:2GB 256MX72 DDR SDRAM MODULE DIMM 2.5V REGISTERED - Bulk |
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