參數(shù)資料
型號： MT18VDDT12872PHIG-265XX
元件分類： DRAM
英文描述： 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA200
封裝： SODIMM-200
文件頁數(shù)： 5/39頁
文件大?。?/td> 816K
代理商： MT18VDDT12872PHIG-265XX
128MB, 256MB, 512MB, 1GB (x72, ECC, PLL)
200-PIN DDR SDRAM SODIMM
09005aef808ffdc7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD9_18C16_32_64_128X72PHG_E.fm - Rev. E 7/03 EN
13
2003 Micron Technology, Inc. All rights reserved.
Absolute Maximum Ratings
Stresses greater than those listed may cause perma-
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
VDD Supply Voltage Relative to VSS . . . . -1V to +3.6V
VDDQ Supply Voltage Relative to VSS . . . -1V to +3.6V
VREF and Inputs Voltage
Relative to Vss . . . . . . . . . . . . . . . . . . . . -1V to +3.6V
I/O Pins Voltage
Relative to VSS. . . . . . . . . . . . . -0.5V to VddQ +0.5V
Operating Temperature,
TA (commercial). . . . . . . . . . . . . . . . . . .0°C to +70°C
TA (industrial) . . . . . . . . . . . . . . . . . . .-40°C to +85°C
Storage Temperature (plastic) . . . . . . -55°C to +150°C
Power Dissipation
Single-Rank Module . . . . . . . . . . . . . . . . . . . . . . . 9W
Dual-Rank Module . . . . . . . . . . . . . . . . . . . . . . . 18W
Short Circuit Output Current. . . . . . . . . . . . . . . . 50mA
Table 10:
DC Electrical Characteristics and Operating Conditions
(MT9VDDT1672PH, MT9VDDT3272PH, and MT9VDDT6472PH)
Notes: 1–5, 14, 48; notes appear on pages 24–27; 0
°C TA +70°C
PARAMETER/CONDITION
SYMBOL
MIN
MAX
UNITS
NOTES
Supply Voltage
VDD
2.3
2.7
V
I/O Supply Voltage
VDDQ
2.3
2.7
V
I/O Reference Voltage
VREF
0.49 x VDDQ
0.51 x VDDQ
I/O Termination Voltage (system)
VTT
VREF - 0.04
VREF + 0.04
V
Input High (Logic 1) Voltage
VIH(DC)VREF + 0.15
VDD + 0.3
V
Input Low (Logic 0) Voltage
VIL(DC)-0.3VREF - 0.15
V
INPUT LEAKAGE CURRENT
Any input 0V
VIN VDD, VREF pin 0V VIN
1.35V
(All other pins not under test = 0V)
Command/Address,
RAS#, CAS#, WE#,
CKE, S#
II
-18
18
A
CK, CK#
II
-5
5
A
DM
II
-2
2
A
OUTPUT LEAKAGE CURRENT
(DQs are disabled; 0V
VOUT VDDQ)
DQS, DQ
IOZ
-5
5
A
OUTPUT LEVELS:
High Current (VOUT = VDDQ-0.373V, minimum VREF, minimum VTT)
Low Current (VOUT = 0.373V, maximum VREF, maximum VTT)
IOH
-16.8
–
mA
IOL
16.8
–
mA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT18VDDT12872PHY-335F1 制造商:Micron Technology Inc 功能描述:DRAM MOD DDR SDRAM 9GBIT 184UDIMM - Trays
MT18VDDT12872Y-265C2 制造商:Micron Technology Inc 功能描述:DRAM MOD DDR SDRAM 9GBIT 184RDIMM - Trays
MT18VDDT12872Y-265D2 功能描述:MODULE SDRAM DDR 1GB 184DIMM RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM
MT18VDDT25672G-265A2 功能描述:MODULE SDRAM DDR 2GB 184DIMM RoHS:否 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM
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