參數(shù)資料
型號(hào)： MT46V32M16TG-75ELIT
元件分類： DRAM
英文描述： 32M X 16 DDR DRAM, 0.75 ns, PDSO66
封裝： 0.400 INCH, PLASTIC, TSOP-66
文件頁(yè)數(shù)： 17/82頁(yè)
文件大?。?/td> 2855K
代理商： MT46V32M16TG-75ELIT
512Mb: x4, x8, x16
DDR SDRAM
09005aef80a1d9e7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512MBDDRx4x8x16_2.fm - Rev. H 7/04 EN
24
2000 Micron Technology, Inc. All rights reserved.
Figure 15: Nonconsecutive READ Bursts
NOTE:
1. DO n (or b) = data-out from column n (or column b).
2. Burst length = 4 or 8 (if 4, the bursts are concatenated; if 8, the second burst interrupts the first).
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Three (or seven) subsequent elements of data-out appear in the programmed order following DO b.
5. Shown with nominal tAC, tDQSCK, and tDQSQ.
CK
CK#
COMMAND
READ
NOP
ADDRESS
Bank,
Col n
READ
Bank,
Col b
COMMAND
ADDRESS
CL = 2
CK
CK#
COMMAND
ADDRESS
DQ
DQS
CL = 2.5
DQ
DQS
DO
n
T0
T1
T2
T3
T2n
T3n
T4
T5
T5n
T6
READ
NOP
Bank,
Col n
READ
Bank,
Col b
T0
T1
T2
T3
T2n
T3n
T4
T5
T5n
T6
DO
b
DO
n
DO
b
DON’T CARE
TRANSITIONING DATA
COMMAND
ADDRESS
CK
CK#
COMMAND
ADDRESS
DQ
DQS
CL = 3
READ
NOP
Bank,
Col n
READ
Bank,
Col b
T0
T1
T2
T3
T3n
T4
T5
T6
DO
n
DO
b
T4n
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT46V32M16TG-75L 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM
MT46V32M16TG-75Z 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM
MT46V32M16TG-75ZL 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM
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