參數(shù)資料
型號: 28F1604C3
廠商: Intel Corp.
英文描述: 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲器和靜態(tài)存儲器)
中文描述: 3伏高級堆疊芯片級封裝存儲器(3V的閃速存儲器和靜態(tài)存儲器)
文件頁數(shù): 33/64頁
文件大?。?/td> 927K
代理商: 28F1604C3
28F1602C3, 28F1604C3, 28F3204C3
Preliminary
27
4.8
Flash Reset Operations
NOTES:
1. See
Section 2.1.4
for a full description of these conditions.
2. If t
is < 100 ns the device may still reset but this is not guaranteed.
3. If F-RP# is asserted while a block erase or
word program operation is not executing, the reset will complete
within 100 ns.
4. Sampled, but not 100% tested.
Figure 8. AC Waveform: Reset Operation
Table 10. Reset Specifications
(1)
Symbol
Parameter
Note
F-V
CC
2.7 V – 3.3 V
Unit
Min
Max
t
PLPH
F-RP# Low to Reset during Read (If F-RP# is tied
to V
CC
, this specification is not applicable)
2,4
100
ns
t
PLRH1
F-RP# Low to Reset during Block Erase
3,4
22
μs
t
PLRH2
F-RP# Low to Reset during Program
3,4
12
μs
IH
V
IL
V
RP# (P)
PLPH
t
IH
V
IL
V
RP# (P)
PLPH
t
(A) Reset during Read Mode
Abort
Complete
PLRH
PHQV
PHWL
PHEL
t
t
t
PHQV
PHWL
PHEL
t
t
t
(B) Reset during Program or Block Erase, <
PLPH
PLRH
t
t
IH
V
IL
V
RP# (P)
PLPH
t
Abort
Complete
PHQV
PHWL
PHEL
t
t
t
PLRH
t
Deep
Power-
Down
(C) Reset Program or Block Erase, >
PLPH
PLRH
t
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