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參數資料
| 型號： | 28F1604C3 |
| 廠商： | Intel Corp. |
| 英文描述： | 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲器和靜態(tài)存儲器) |
| 中文描述： | 3伏高級堆疊芯片級封裝存儲器（3V的閃速存儲器和靜態(tài)存儲器） |
| 文件頁數： | 10/64頁 |
| 文件大?。?/td> | 927K |
| 代理商： | 28F1604C3 |
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28F1602C3, 28F1604C3, 28F3204C3
4
Preliminary
S-V
CC
SUPPLY
SRAM POWER SUPPLY:
[2.7 V–3.3 V] Supplies power for device operations.
See
Section 6.2.2
for details of power connections.
F-V
PP
INPUT /
SUPPLY
FLASH PROGRAM/ERASE POWER SUPPLY:
[1.65 V–3.3 V or 11.4 V–12.6 V] Operates as an
input at logic levels to control complete flash protection. Supplies power for accelerated flash
program and erase operations in 12 V
±
5% range. This ball cannot be left floating.
Lower
F-
V
PP
≤
V
PPLK
, to protect all contents against Program and Erase commands.
Set
F-
V
=
F-
V
for in-system read, program and erase operations
. In this configuration,
F-V
PP
can drop as low as 1.65 V to allow for resistor or diode drop from the system supply. Note
that if F-V
PP
is driven by a logic signal, V
IH =
1.65 V. That is, F-V
PP
must remain above 1.65 V to
perform in-system flash modifications.
Raise
F-
V
to 12 V
±
5% for faster program and erase in a production environment. Applying
12 V
±
5% to F-V
PP
can only be done for a maximum of 1000 cycles on the main blocks and 2500
cycles on the parameter blocks.
F-V
PP
may be connected to 12 V for a total of 80 hours maximum.
F-GND
SUPPLY
FLASH GROUND:
For all internal circuitry. All ground inputs
must
be connected.
S-GND
SUPPLY
SRAM GROUND:
For all internal circuitry. All ground inputs
must
be connected.
NC
NOT CONNECTED: Internally disconnected within the device.
Table 2. 3 Volt Advanced+ Stacked-CSP Ball Descriptions
Symbol
Type
Name and Function
相關PDF資料 |
PDF描述 |
|---|---|
| 28F160C18 | 1.8V Advanced+ Boot Block Flash Memory(1.8V高級引導塊閃速存儲器) |
| 28F160C2 | 2.4V Advanced+ Boot Block Flash Memory(2.4V高級引導塊閃速存儲器) |
| 28F800C2 | 2.4V Advanced+ Boot Block Flash Memory(2.4V高級引導塊閃速存儲器) |
| 28F160S3 | 3 V FlashFile Memory(3 V FlashFile 存儲器) |
| 28F320S3 | 3 V、32MB FlashFile Memory(3 V、32M位FlashFile 存儲器) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 28F160B3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 28F160BJHE-BTLTH | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F160C3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Intel Advanced+ Boot Block Flash Memory |
| 28F160C3BA90 | 制造商: 功能描述: 制造商:Intel 功能描述: 制造商:undefined 功能描述: |
| 28F160C3TD70 | 制造商: 功能描述: 制造商:undefined 功能描述: |
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