- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371435 > 28F1604C3 (Intel Corp.) 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲器和靜態(tài)存儲器) PDF資料下載
參數(shù)資料
| 型號： | 28F1604C3 |
| 廠商： | Intel Corp. |
| 英文描述： | 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲器和靜態(tài)存儲器) |
| 中文描述： | 3伏高級堆疊芯片級封裝存儲器（3V的閃速存儲器和靜態(tài)存儲器） |
| 文件頁數(shù)： | 11/64頁 |
| 文件大?。?/td> | 927K |
| 代理商： | 28F1604C3 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁當(dāng)前第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁
28F1602C3, 28F1604C3, 28F3204C3
Preliminary
5
2.0
Principles of Operation
The flash memory utilizes a CUI and automated algorithms to simplify program and erase
operations. The WSM automates program and erase operations by handling data and address
latches, WE#, and system status requests.
.
2.1
Bus Operation
All bus cycles to or from the Stacked-CSP conform to standard microcontroller bus cycles. Four
control signals dictate the data flow in and out of the flash component: F-CE#, F-OE#, F-WE# and
F-RP#. Four separate control signals handle the data flow in and out of the SRAM component:
S-CS
1
#, S-CS
2
, S-OE#, and S-WE#. These bus operations are summarized in
Table 2
and
Table 3
.
2.1.1
Read
The flash memory has four read modes: read array, read identifier, read status and read query.
These flash memory read modes are not dependent on the F-V
PP
voltage. Upon initial device
power
-
up or after exit from reset, the flash device automatically defaults to read array mode. F-
CE# and F-OE# must be driven active to obtain data from the flash component.
The SRAM has one read mode available. S-CS
1
#, S-CS
2
, and S-OE# must be driven active to
obtain data from the SRAM device. See
Table 3, “Recommended Memory System Operating
Mode Summary” on page 6
for a summary of operations.
Figure 2. 3 Volt Advanced+ Stacked Chip Scale Package Block Diagram
1,048,576 x16 bit (16 Mbit)
2,097,152 x16 bit (32 Mbit)
3 Volt Advanced+ Boot Block
Flash Memory
131,072 x16 bit (2 Mbit)
262,144 x16 bit (4 Mbit)
SRAM
F-CE#
F-OE#
F-WE#
F-RP#
F-WP#
A
17-19
/A
18-20
A
0-16
/A
0-17
S-CS
1
#
S-CS
2
S-OE#
S-WE#
S-UB#
S-LB#
DQ
0-15
S-V
CC
S-GND
F-V
PP
F-V
CC
F-GND
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F160C18 | 1.8V Advanced+ Boot Block Flash Memory(1.8V高級引導(dǎo)塊閃速存儲器) |
| 28F160C2 | 2.4V Advanced+ Boot Block Flash Memory(2.4V高級引導(dǎo)塊閃速存儲器) |
| 28F800C2 | 2.4V Advanced+ Boot Block Flash Memory(2.4V高級引導(dǎo)塊閃速存儲器) |
| 28F160S3 | 3 V FlashFile Memory(3 V FlashFile 存儲器) |
| 28F320S3 | 3 V、32MB FlashFile Memory(3 V、32M位FlashFile 存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F160B3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 28F160BJHE-BTLTH | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F160C3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Intel Advanced+ Boot Block Flash Memory |
| 28F160C3BA90 | 制造商: 功能描述: 制造商:Intel 功能描述: 制造商:undefined 功能描述: |
| 28F160C3TD70 | 制造商: 功能描述: 制造商:undefined 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。