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參數(shù)資料
| 型號(hào)： | 29F4000 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY |
| 中文描述： | 4分位[512Kx8/256Kx16]的CMOS閃存 |
| 文件頁數(shù)： | 16/44頁 |
| 文件大?。?/td> | 710K |
| 代理商： | 29F4000 |
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16
P/N:PM0439
MX29F400T/B
REV. 1.6, NOV. 12, 2001
SECTOR PROTECTION WITH 12V SYSTEM
The MX29F400T/B features hardware sector protection.
This feature will disable both program and erase opera-
tions for these sectors protected. To activate this mode,
the programming equipment must force VID on address
pin A9 and control pin OE, (suggest VID = 12V) A6 =
VIL and CE = VIL.(see Table 2) Programming of the
protection circuitry begins on the falling edge of the WE
pulse and is terminated on the rising edge. Please refer
to sector protect algorithm and waveform.
To verify programming of the protection circuitry, the pro-
gramming equipment must force VID on address pin A9
( with CE and OE at VIL and WE at VIH). When A1=1, it
will produce a logical "1" code at device output Q0 for a
protected sector. Otherwise the device will produce 00H
for the unprotected sector. In this mode, the
addresses,except for A1, are don't care. Address loca-
tions with A1 = VIL are reserved to read manufacturer
and device codes.(Read Silicon ID)
It is also possible to determine if the sector is protected
in the system by writing a Read Silicon ID command.
Performing a read operation with A1=VIH, it will produce
a logical "1" at Q0 for the protected sector.
CHIP UNPROTECT WITH 12V SYSTEM
The MX29F400T/B also features the chip unprotect
mode, so that all sectors are unprotected after chip
unprotect is completed to incorporate any changes in the
code. It is recommended to protect all sectors before
activating chip unprotect mode.
To activate this mode, the programming equipment must
force VID on control pin OE and address pin A9. The CE
pins must be set at VIL. Pins A6 must be set to VIH.(see
Table 2) Refer to chip unprotect algorithm and waveform
for the chip unprotect algorithm. The unprotection
mechanism begins on the falling edge of the WE pulse
and is terminated on the rising edge.
It is also possible to determine if the chip is unprotected
in the system by writing the Read Silicon ID command.
Performing a read operation with A1=VIH, it will produce
00H at data outputs(Q0-Q7) for an unprotected sector. It
is noted that all sectors are unprotected after the chip
unprotect algorithm is completed.
POWER-UP SEQUENCE
The MX29F400T/B powers up in the Read only mode.
In addition, the memory contents may only be altered
after successful completion of the predefined command
sequences.
ABSOLUTE MAXIMUM RATINGS
RATING
Ambient Operating Temperature
Ambient Temperature with Power
Applied
Storage Temperature
Applied Input Voltage
Applied Output Voltage
VCC to Ground Potential
A9 & OE
VALUE
-40
o
C to 125
o
C
-55
o
C to 125
o
C
-65
o
C to 125
o
C
-0.5V to 7.0V
-0.5V to 7.0V
-0.5V to 7.0V
-0.5V to 13.5V
NOTICE:
Stresses greater than those listed under ABSOLUTE MAXI-
MUM RATINGS may cause permanent damage to the de-
vice. This is a stress rating only and functional operational
sections of this specification is not implied. Exposure to ab-
solute maximum rating conditions for extended period may
affect reliability.
NOTICE:
Specifications contained within the following tables are sub-
ject to change.
SECTOR PROTECTION WITHOUT 12V
SYSTEM
The MX29F400T/B also feature a hardware sector
protection method n a system without 12V power suppply.
The programming equipment do not need to supply 12
volts to protect sectors. The details are shown in sector
protect algorithm and waveform.
CHIP UNPROTECT WITHOUT 12V SYSTEM
The MX29F400T/B also feature a hardware chip
unprotection method in a system without 12V power
supply. The programming equipment do not need to
supply 12 volts to unprotect all sectors. The details are
shown in chip unprotect algorithm and waveform.
相關(guān)PDF資料 |
PDF描述 |
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| 29F400B-12PI | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400B-12TC | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400B-12TI | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400B-90PC | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400B-90PI | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 29F400B-12PC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400B-12PI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400B-12TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400B-12TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400B-90PC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
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