參數(shù)資料
型號: 29F4000
廠商: Macronix International Co., Ltd.
英文描述: 4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
中文描述: 4分位[512Kx8/256Kx16]的CMOS閃存
文件頁數(shù): 18/44頁
文件大?。?/td> 710K
代理商: 29F4000
18
P/N:PM0439
MX29F400T/B
REV. 1.6, NOV. 12, 2001
AC CHARACTERISTICS
TA = 0
o
C to 70
o
C, -40
o
C to 125
o
C, VCC = 5V
±
10%
29F400T/B-55
(Note2)
29F400T/B-70
MIN.
MAX.
55
55
15
0
20
0
SYMBOL
tACC
tCE
tOE
tDF
tOH
PARAMETER
Address to Output Delay
CE to Output Delay
OE to Output Delay
OE High to Output Float (Note1)
Address to Output hold
MIN.
MAX.
70
70
40
30
UNIT Conditions
ns
CE=OE=VIL
ns
OE=VIL
ns
CE=VIL
ns
CE=VIL
ns
CE=OE=VIL
0
0
NOTE:
1. tDF is defined as the time at which the output achieves
the open circuit condition and data is no longer driven.
2.VCC=5V
±
10%,CL=50pF,VIH/VIL=3.0V/0V,
VOH/VOL=1.5V/1.5V, IOL=2mA,IOH=-2mA.
3. Automotive grade is only provided for MX29F400T/B-
90 & MX29F400T/B-12
TEST CONDITIONS:
Input pulse levels: 0.45V/2.4V
Input rise and fall times is equal to or less than 10ns
Output load: 1 TTL gate + 100pF (Including scope and
jig)
Reference levels for measuring timing: 0.8V, 2.0V
29F400T/B-90 (Note3) 29F400T/B-12(Note3)
MIN.
MAX.
90
90
40
30
0
SYMBOL
tACC
tCE
tOE
tDF
tOH
PARAMETER
Address to Output Delay
CE to Output Delay
OE to Output Delay
OE High to Output Float (Note1) 0
Address to Output hold
MIN.
MAX.
120
120
50
30
UNIT Conditions
ns
CE=OE=VIL
ns
OE=VIL
ns
CE=VIL
ns
CE=VIL
ns
CE=OE=VIL
0
0
相關PDF資料
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29F400B-12PI 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
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相關代理商/技術參數(shù)
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29F400B-12PI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400B-12TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400B-12TI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400B-90PC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY