參數資料
型號: 29F4000
廠商: Macronix International Co., Ltd.
英文描述: 4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
中文描述: 4分位[512Kx8/256Kx16]的CMOS閃存
文件頁數: 39/44頁
文件大?。?/td> 710K
代理商: 29F4000
39
P/N:PM0439
MX29F400T/B
REV. 1.6, NOV. 12, 2001
MIN.
MAX.
Input Voltage with respect to GND on all pins except I/O pins
-1.0V
13.5V
Input Voltage with respect to GND on all I/O pins
-1.0V
Vcc + 1.0V
Current
-100mA
+100mA
Includes all pins except Vcc. Test conditions: Vcc = 5.0V, one pin at a time.
LIMITS
TYP.(2)
PARAMETER
MIN.
MAX.(3)
UNITS
Sector Erase Time
1.3
10.4
sec
Chip Erase Time
4
32
sec
Byte Programming Time
7
210
us
Word Programming Time
12
360
us
Chip Programming Time
4
12
sec
Erase/Program Cycles
100,000
Cycles
LATCHUP CHARACTERISTICS
ERASE AND PROGRAMMING PERFORMANCE(1)
Note:
1.Not 100% Tested, Excludes external system level over head.
2.Typical values measured at 25
°
C,5V.
3.Maximum values measured at 25
°
C,4.5V.
PARAMETER
MIN.
UNIT
Data Retention Time
20
Years
DATA RETENTION
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相關代理商/技術參數
參數描述
29F400B-12PC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400B-12PI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400B-12TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400B-12TI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400B-90PC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY