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參數(shù)資料
| 型號： | BLF872 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, SOT-800-1, 4 PIN |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 152K |
| 代理商： | BLF872 |
BLF872_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 20 February 2006
2 of 16
Philips Semiconductors
BLF872
UHF power LDMOS transistor
1.3 Applications
s Communication transmitter applications in the UHF band
s Industrial applications in the UHF band
1.4 Quick reference data
[1]
Th is the heatsink temperature.
[2]
Black video signal, sync expansion: input sync = 33 %; output sync
≥ 27 %.
[3]
Measured dBc at 4.3 MHz from center frequency.
2.
Pinning information
[1]
Connected to ange.
3.
Ordering information
Table 1:
Quick reference data
Typical RF performance at VDS = 32 V and Th =25 °C in a common-source narrowband 860 MHz
test circuit. [1]
Mode of operation
f
(MHz)
PL
(W)
PL(PEP)
(W)
PL(AV)
(W)
Gp
(dB)
η
D
(%)
IMD3
(dBc)
CW, class AB
860
300
-
14
55
-
2-tone, class AB
f1 = 860;
f2 = 860.1
-
300
-
15
42
28
PAL BG
860 (ch69)
300 (peak sync.) [2]
-
15
42
-
DVB-T (8K OFDM)
858
-
70
15
30
28 [3]
Table 2:
Pinning
Description
Pin
Simplied outline
drain 1
1
drain 2
2
gate 1
3
gate 2
4
source
5
5
12
4
3
Table 3:
Ordering information
Type number
Package
Name
Description
Version
BLF872
-
anged LDMOST ceramic package; 2 mounting holes; 4
leads
SOT800-1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLF872,112 | 功能描述:射頻MOSFET電源晶體管 RF LDMOS 300W UHF RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF878 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF878,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF878_09 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor |
| BLF878112 | 制造商:NXP Semiconductors 功能描述:N CH UHF BROADCAST POWER LDMOS 40V 470 |
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